Organic-inorganic perovskite field-effect transistors

Toshinori Matsushima, Sunbin Hwang, Atula S.D. Sandanayaka, Chuanjiang Qin, Shinobu Terakawa, Takashi Fujihara, Masayuki Yahiro, Chihaya Adachi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Organic-inorganic perovskites are extremely promising as the semiconductor for high-performance field-effect transistors because of their solution processability, flexibility, and excellent carrier transport. However, their true performance remains obscured by low perovskite quality, high carrier trap density, and large contact resistance. We fabricated a perovskite layer by spin coating on a substrate treated with a self-assembled monolayer. This surface treatment led to better-developed perovskite films with lower carrier trap density. Additionally, utilizing a top-contact/top-gate structure with hole injection layers was essential for attaining smaller contact resistance and further reducing carrier trap density. By combining these methods, we realized greatly improved hole mobilities of up to 15 cm2 V"1 s"1, which is about six times the previous record hole mobility and also a top-dass value when compared with widely investigated organic transistors. We also demonstrated that this surface treatment leads to a negligible hysteresis.

Original languageEnglish
Title of host publication23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
PublisherSociety for Information Display
Pages818-821
Number of pages4
ISBN (Electronic)9781510845510
Publication statusPublished - Jan 1 2016
Event23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016 - Fukuoka, Japan
Duration: Dec 7 2016Dec 9 2016

Publication series

Name23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
Volume2

Other

Other23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
CountryJapan
CityFukuoka
Period12/7/1612/9/16

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Human-Computer Interaction
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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