Organic light-emitting transistor -fundamental characteristics and applications-

Chihaya Adachi; Takahito Oyamada

Organic light-emitting transistor -fundamental characteristics and applications-

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We succeeded in observing bright electroluminescence (EL) from 1wt%-rubrene doped tetraphenylpyrene (TPPy) as an active layer in an organic field-effect transistor (OFET) structure. We observed a maximum EL quantum efficiency (η_ext) of ∼0.5 % with a Cr/Au source-drain electrode. From the OFET characteristics, although the 1wt%-rubrene:TPPy co-deposited layer demonstrated typical p-type operation, the occurrence of EL clearly indicated occurrence of simultaneous hole and electron injections from the source and drain electrodes, respectively. This device configuration provides novel organic light emitting diode structure where anode (source) and cathode (drain) electrodes are laterally arranged, giving us a chance to control drain current by changing gate bias.

Original language	English
Title of host publication	IDW/AD'05 - Proceedings of the 12th International Display Workshops in Conjunction with Asia Display 2005
Pages	1033-1036
Number of pages	4
Edition	2
Publication status	Published - 2005
Externally published	Yes
Event	IDW/AD'05 - 12th International Display Workshops in Conjunction with Asia Display 2005 - Takamatsu, Japan Duration: Dec 6 2005 → Dec 9 2005

Other

Other	IDW/AD'05 - 12th International Display Workshops in Conjunction with Asia Display 2005
Country/Territory	Japan
City	Takamatsu
Period	12/6/05 → 12/9/05

All Science Journal Classification (ASJC) codes

Engineering(all)

Cite this

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title = "Organic light-emitting transistor -fundamental characteristics and applications-",

abstract = "We succeeded in observing bright electroluminescence (EL) from 1wt%-rubrene doped tetraphenylpyrene (TPPy) as an active layer in an organic field-effect transistor (OFET) structure. We observed a maximum EL quantum efficiency (ηext) of ∼0.5 % with a Cr/Au source-drain electrode. From the OFET characteristics, although the 1wt%-rubrene:TPPy co-deposited layer demonstrated typical p-type operation, the occurrence of EL clearly indicated occurrence of simultaneous hole and electron injections from the source and drain electrodes, respectively. This device configuration provides novel organic light emitting diode structure where anode (source) and cathode (drain) electrodes are laterally arranged, giving us a chance to control drain current by changing gate bias.",

author = "Chihaya Adachi and Takahito Oyamada",

year = "2005",

language = "English",

pages = "1033--1036",

booktitle = "IDW/AD'05 - Proceedings of the 12th International Display Workshops in Conjunction with Asia Display 2005",

edition = "2",

note = "IDW/AD'05 - 12th International Display Workshops in Conjunction with Asia Display 2005 ; Conference date: 06-12-2005 Through 09-12-2005",

}

TY - GEN

T1 - Organic light-emitting transistor -fundamental characteristics and applications-

AU - Adachi, Chihaya

AU - Oyamada, Takahito

PY - 2005

Y1 - 2005

N2 - We succeeded in observing bright electroluminescence (EL) from 1wt%-rubrene doped tetraphenylpyrene (TPPy) as an active layer in an organic field-effect transistor (OFET) structure. We observed a maximum EL quantum efficiency (ηext) of ∼0.5 % with a Cr/Au source-drain electrode. From the OFET characteristics, although the 1wt%-rubrene:TPPy co-deposited layer demonstrated typical p-type operation, the occurrence of EL clearly indicated occurrence of simultaneous hole and electron injections from the source and drain electrodes, respectively. This device configuration provides novel organic light emitting diode structure where anode (source) and cathode (drain) electrodes are laterally arranged, giving us a chance to control drain current by changing gate bias.

AB - We succeeded in observing bright electroluminescence (EL) from 1wt%-rubrene doped tetraphenylpyrene (TPPy) as an active layer in an organic field-effect transistor (OFET) structure. We observed a maximum EL quantum efficiency (ηext) of ∼0.5 % with a Cr/Au source-drain electrode. From the OFET characteristics, although the 1wt%-rubrene:TPPy co-deposited layer demonstrated typical p-type operation, the occurrence of EL clearly indicated occurrence of simultaneous hole and electron injections from the source and drain electrodes, respectively. This device configuration provides novel organic light emitting diode structure where anode (source) and cathode (drain) electrodes are laterally arranged, giving us a chance to control drain current by changing gate bias.

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UR - http://www.scopus.com/inward/citedby.url?scp=33644594793&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:33644594793

SP - 1033

EP - 1036

BT - IDW/AD'05 - Proceedings of the 12th International Display Workshops in Conjunction with Asia Display 2005

T2 - IDW/AD'05 - 12th International Display Workshops in Conjunction with Asia Display 2005

Y2 - 6 December 2005 through 9 December 2005

ER -

Organic light-emitting transistor -fundamental characteristics and applications-

Abstract

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All Science Journal Classification (ASJC) codes

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