We report for the first time organic n-type nonvolatile memory transistors based on a fullerene (C60) semiconductor and an electron-trapping polymer, poly(perfluoroalkenyl vinyl ether) (CYTOP). The transistors with a Si++/SiO2/CYTOP/C60/Al structure show good n-type transistor performance with a threshold voltage (Vth) of 2.8 V and an electron mobility of 0.4 cm2 V-1 s-1. Applying gate voltages of 50 or -45 V for about 0.1 s to the devices induces the reversible shifts in their transfer characteristics, which results in a large memory window (ΔVth) of 10 V. A memory on/off ratio of 10 5 at a small reading voltage below 5 V and a retention time greater than 105 s are achieved. The memory effect in the transistor is ascribed to electrons trapped at the CYTOP/SiO2 interface. Because of the use of high-electron-mobility C60, the switching voltages of our memory transistors become significantly lower than those of conventional memory transistors based on pentacene.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Materials Chemistry
- Electrical and Electronic Engineering