Orientation alignment of epitaxial LiCoO2 thin films on vicinal SrTiO3 (100) substrates

Kazunori Nishio, Tsuyoshi Ohnishi, Kazutaka Mitsuishi, Narumi Ohta, Ken Watanabe, Kazunori Takada

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

LiCoO2 is epitaxially grown on SrTiO3 (100) substrates with (104) orientation. Because the LiCoO2 film is grown with its c-axis parallel to four equivalent 〈111〉 axes of the SrTiO3, the (104)-oriented film exhibits four-domain structure on the SrTiO3 (100) substrate. Introducing off-cut angle to the substrate surface breaks the equivalency between the four 〈111〉 axes of the SrTiO3 substrate to induce preferential growth of specific orientation with the c-axis in a descending direction of off-cut surface. Increasing off-cut angle and lowering deposition rate promote the preferential growth, because they facilitate step-flow growth mode, and finally align the c-axes in the domains completely into one 〈111〉 direction of the SrTiO3 substrate. The LiCoO2 film delivers a discharge capacity of 90 mAh g−1 at a low discharge rate of 0.01 C, and 25% of capacity is kept even at a high rate of discharge with 100 C.

Original languageEnglish
Pages (from-to)306-310
Number of pages5
JournalJournal of Power Sources
Volume325
DOIs
Publication statusPublished - Sep 1 2016
Externally publishedYes

Fingerprint

Epitaxial films
Crystal orientation
alignment
Thin films
Substrates
thin films
Deposition rates
strontium titanium oxide
Direction compound

All Science Journal Classification (ASJC) codes

  • Renewable Energy, Sustainability and the Environment
  • Energy Engineering and Power Technology
  • Physical and Theoretical Chemistry
  • Electrical and Electronic Engineering

Cite this

Orientation alignment of epitaxial LiCoO2 thin films on vicinal SrTiO3 (100) substrates. / Nishio, Kazunori; Ohnishi, Tsuyoshi; Mitsuishi, Kazutaka; Ohta, Narumi; Watanabe, Ken; Takada, Kazunori.

In: Journal of Power Sources, Vol. 325, 01.09.2016, p. 306-310.

Research output: Contribution to journalArticle

Nishio, Kazunori ; Ohnishi, Tsuyoshi ; Mitsuishi, Kazutaka ; Ohta, Narumi ; Watanabe, Ken ; Takada, Kazunori. / Orientation alignment of epitaxial LiCoO2 thin films on vicinal SrTiO3 (100) substrates. In: Journal of Power Sources. 2016 ; Vol. 325. pp. 306-310.
@article{659fe89052d046829590c4c72d715a56,
title = "Orientation alignment of epitaxial LiCoO2 thin films on vicinal SrTiO3 (100) substrates",
abstract = "LiCoO2 is epitaxially grown on SrTiO3 (100) substrates with (104) orientation. Because the LiCoO2 film is grown with its c-axis parallel to four equivalent 〈111〉 axes of the SrTiO3, the (104)-oriented film exhibits four-domain structure on the SrTiO3 (100) substrate. Introducing off-cut angle to the substrate surface breaks the equivalency between the four 〈111〉 axes of the SrTiO3 substrate to induce preferential growth of specific orientation with the c-axis in a descending direction of off-cut surface. Increasing off-cut angle and lowering deposition rate promote the preferential growth, because they facilitate step-flow growth mode, and finally align the c-axes in the domains completely into one 〈111〉 direction of the SrTiO3 substrate. The LiCoO2 film delivers a discharge capacity of 90 mAh g−1 at a low discharge rate of 0.01 C, and 25{\%} of capacity is kept even at a high rate of discharge with 100 C.",
author = "Kazunori Nishio and Tsuyoshi Ohnishi and Kazutaka Mitsuishi and Narumi Ohta and Ken Watanabe and Kazunori Takada",
year = "2016",
month = "9",
day = "1",
doi = "10.1016/j.jpowsour.2016.06.015",
language = "English",
volume = "325",
pages = "306--310",
journal = "Journal of Power Sources",
issn = "0378-7753",
publisher = "Elsevier",

}

TY - JOUR

T1 - Orientation alignment of epitaxial LiCoO2 thin films on vicinal SrTiO3 (100) substrates

AU - Nishio, Kazunori

AU - Ohnishi, Tsuyoshi

AU - Mitsuishi, Kazutaka

AU - Ohta, Narumi

AU - Watanabe, Ken

AU - Takada, Kazunori

PY - 2016/9/1

Y1 - 2016/9/1

N2 - LiCoO2 is epitaxially grown on SrTiO3 (100) substrates with (104) orientation. Because the LiCoO2 film is grown with its c-axis parallel to four equivalent 〈111〉 axes of the SrTiO3, the (104)-oriented film exhibits four-domain structure on the SrTiO3 (100) substrate. Introducing off-cut angle to the substrate surface breaks the equivalency between the four 〈111〉 axes of the SrTiO3 substrate to induce preferential growth of specific orientation with the c-axis in a descending direction of off-cut surface. Increasing off-cut angle and lowering deposition rate promote the preferential growth, because they facilitate step-flow growth mode, and finally align the c-axes in the domains completely into one 〈111〉 direction of the SrTiO3 substrate. The LiCoO2 film delivers a discharge capacity of 90 mAh g−1 at a low discharge rate of 0.01 C, and 25% of capacity is kept even at a high rate of discharge with 100 C.

AB - LiCoO2 is epitaxially grown on SrTiO3 (100) substrates with (104) orientation. Because the LiCoO2 film is grown with its c-axis parallel to four equivalent 〈111〉 axes of the SrTiO3, the (104)-oriented film exhibits four-domain structure on the SrTiO3 (100) substrate. Introducing off-cut angle to the substrate surface breaks the equivalency between the four 〈111〉 axes of the SrTiO3 substrate to induce preferential growth of specific orientation with the c-axis in a descending direction of off-cut surface. Increasing off-cut angle and lowering deposition rate promote the preferential growth, because they facilitate step-flow growth mode, and finally align the c-axes in the domains completely into one 〈111〉 direction of the SrTiO3 substrate. The LiCoO2 film delivers a discharge capacity of 90 mAh g−1 at a low discharge rate of 0.01 C, and 25% of capacity is kept even at a high rate of discharge with 100 C.

UR - http://www.scopus.com/inward/record.url?scp=84990040716&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84990040716&partnerID=8YFLogxK

U2 - 10.1016/j.jpowsour.2016.06.015

DO - 10.1016/j.jpowsour.2016.06.015

M3 - Article

AN - SCOPUS:84990040716

VL - 325

SP - 306

EP - 310

JO - Journal of Power Sources

JF - Journal of Power Sources

SN - 0378-7753

ER -