Orientation-control of ge-stripes-on-insulator by narrowing in rapid-melting growth from SI(111) seed

Mohammad Anisuzzaman, Shunpei Muta, Masanao Takahashi, Abdul Manaf Hashim, Taizoh Sadoh

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Orientation-controlled (111)Ge-on-insulator (GOI) is essential to achieve high-carrier-mobility channel of transistors and epitaxialtemplate of functional materials. To achieve (111)-oriented GOI stripes with any stripe-directions by rapid-melting growth from (111)-oriented Si-seed, effects of stripe-width on crystal-orientations of grown layers are investigated. For ∼2-μm-stripe- width, (111)-oriented GOI stripes are achieved for growth direction along (011). However, crystal-rotation is observed for (112) direction. Such rotational-growth along (112) is suppressed by decreasing stripe-width. Consequently, (111)-oriented GOI with any stripedirections are obtained for ∼0.5-μm-stripe-width, which is attributed to strain-relaxation by narrowing. This orientation-control technique facilitates next-generation large-scale-integrated-circuits, where various functional devices are integrated on Si-platform.

Original languageEnglish
Pages (from-to)P76-P78
JournalECS Solid State Letters
Volume2
Issue number9
DOIs
Publication statusPublished - Jul 26 2013

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Seed
Melting
Strain relaxation
Functional materials
Carrier mobility
Crystal orientation
Integrated circuits
Transistors
Crystals
Direction compound

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Orientation-control of ge-stripes-on-insulator by narrowing in rapid-melting growth from SI(111) seed. / Anisuzzaman, Mohammad; Muta, Shunpei; Takahashi, Masanao; Hashim, Abdul Manaf; Sadoh, Taizoh.

In: ECS Solid State Letters, Vol. 2, No. 9, 26.07.2013, p. P76-P78.

Research output: Contribution to journalArticle

Anisuzzaman, Mohammad ; Muta, Shunpei ; Takahashi, Masanao ; Hashim, Abdul Manaf ; Sadoh, Taizoh. / Orientation-control of ge-stripes-on-insulator by narrowing in rapid-melting growth from SI(111) seed. In: ECS Solid State Letters. 2013 ; Vol. 2, No. 9. pp. P76-P78.
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