Abstract
C-axis-oriented Bi4Ti3O12 thin films were prepared on (111)Pt/Ti/SiO2/Si substrates by metalorganic chemical vapor deposition (MOCVD) using a sequential source gas supply method taking account of the crystal structure of Bi4Ti3O12 along the c-axis. The X-ray diffraction intensities of Bi4Ti3O12(006) and Bi4Ti3O12(117) increased and decreased, respectively, by the sequential source gas supply method and the conventional continuous source gas supply method. The sequential source gas supply method started from Bi double pulses as effective for the preparation of the c-axis-oriented Bi4Ti3O12 film, and the supply corresponding to a half unit cell per sequence showed high c-axis orientation.
| Original language | English |
|---|---|
| Pages (from-to) | 5211-5216 |
| Number of pages | 6 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes |
| Volume | 39 |
| Issue number | 9 A |
| Publication status | Published - Sep 2000 |
| Externally published | Yes |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
Cite this
Orientation control of metalorganic chemical vapor deposition-Bi4Ti3O12 thin film by sequential source gas supply method. / Watanabe, Takayuki; Funakubo, Hiroshi.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, Vol. 39, No. 9 A, 09.2000, p. 5211-5216.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Orientation control of metalorganic chemical vapor deposition-Bi4Ti3O12 thin film by sequential source gas supply method
AU - Watanabe, Takayuki
AU - Funakubo, Hiroshi
PY - 2000/9
Y1 - 2000/9
N2 - C-axis-oriented Bi4Ti3O12 thin films were prepared on (111)Pt/Ti/SiO2/Si substrates by metalorganic chemical vapor deposition (MOCVD) using a sequential source gas supply method taking account of the crystal structure of Bi4Ti3O12 along the c-axis. The X-ray diffraction intensities of Bi4Ti3O12(006) and Bi4Ti3O12(117) increased and decreased, respectively, by the sequential source gas supply method and the conventional continuous source gas supply method. The sequential source gas supply method started from Bi double pulses as effective for the preparation of the c-axis-oriented Bi4Ti3O12 film, and the supply corresponding to a half unit cell per sequence showed high c-axis orientation.
AB - C-axis-oriented Bi4Ti3O12 thin films were prepared on (111)Pt/Ti/SiO2/Si substrates by metalorganic chemical vapor deposition (MOCVD) using a sequential source gas supply method taking account of the crystal structure of Bi4Ti3O12 along the c-axis. The X-ray diffraction intensities of Bi4Ti3O12(006) and Bi4Ti3O12(117) increased and decreased, respectively, by the sequential source gas supply method and the conventional continuous source gas supply method. The sequential source gas supply method started from Bi double pulses as effective for the preparation of the c-axis-oriented Bi4Ti3O12 film, and the supply corresponding to a half unit cell per sequence showed high c-axis orientation.
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UR - http://www.scopus.com/inward/citedby.url?scp=0034269233&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0034269233
VL - 39
SP - 5211
EP - 5216
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 9 A
ER -