Orientation control of metalorganic chemical vapor deposition-Bi4Ti3O12 thin film by sequential source gas supply method

Takayuki Watanabe, Hiroshi Funakubo

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

C-axis-oriented Bi4Ti3O12 thin films were prepared on (111)Pt/Ti/SiO2/Si substrates by metalorganic chemical vapor deposition (MOCVD) using a sequential source gas supply method taking account of the crystal structure of Bi4Ti3O12 along the c-axis. The X-ray diffraction intensities of Bi4Ti3O12(006) and Bi4Ti3O12(117) increased and decreased, respectively, by the sequential source gas supply method and the conventional continuous source gas supply method. The sequential source gas supply method started from Bi double pulses as effective for the preparation of the c-axis-oriented Bi4Ti3O12 film, and the supply corresponding to a half unit cell per sequence showed high c-axis orientation.

Original languageEnglish
Pages (from-to)5211-5216
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Volume39
Issue number9 A
Publication statusPublished - Sep 2000
Externally publishedYes

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Gas supply
Metallorganic chemical vapor deposition
metalorganic chemical vapor deposition
Thin films
thin films
gases
Crystal structure
X ray diffraction
preparation
crystal structure
Substrates
pulses
cells
diffraction
x rays

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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AU - Watanabe, Takayuki

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N2 - C-axis-oriented Bi4Ti3O12 thin films were prepared on (111)Pt/Ti/SiO2/Si substrates by metalorganic chemical vapor deposition (MOCVD) using a sequential source gas supply method taking account of the crystal structure of Bi4Ti3O12 along the c-axis. The X-ray diffraction intensities of Bi4Ti3O12(006) and Bi4Ti3O12(117) increased and decreased, respectively, by the sequential source gas supply method and the conventional continuous source gas supply method. The sequential source gas supply method started from Bi double pulses as effective for the preparation of the c-axis-oriented Bi4Ti3O12 film, and the supply corresponding to a half unit cell per sequence showed high c-axis orientation.

AB - C-axis-oriented Bi4Ti3O12 thin films were prepared on (111)Pt/Ti/SiO2/Si substrates by metalorganic chemical vapor deposition (MOCVD) using a sequential source gas supply method taking account of the crystal structure of Bi4Ti3O12 along the c-axis. The X-ray diffraction intensities of Bi4Ti3O12(006) and Bi4Ti3O12(117) increased and decreased, respectively, by the sequential source gas supply method and the conventional continuous source gas supply method. The sequential source gas supply method started from Bi double pulses as effective for the preparation of the c-axis-oriented Bi4Ti3O12 film, and the supply corresponding to a half unit cell per sequence showed high c-axis orientation.

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