Orientation control of metalorganic chemical vapor deposition-Bi₄Ti₃O₁₂ thin film by sequential source gas supply method

Engineering

• Source Gas 100%
• Gas Supply 100%
• Thin Films 40%
• Crystal Structure 20%
• Si Substrate 20%

Material Science

• Gas Supply 100%
• Thin Films 40%
• X-Ray Diffraction 40%
• Cell 20%
• Crystal Structure 20%

Chemistry

• Procedure 100%
• Metallorganic Chemical Vapor Deposition 40%
• Liquid Film 20%
• Crystal Structure 20%
• Primary Structure 20%