Orientation controlled GaSb nanowires: From growth to application

Zaixing Yang, Johnny C. Ho

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In recent years, high-mobility GaSb nanowires have received tremendous attention for high-performance p-type transistors; however, due to the difficulty in achieving thin, uniform and orientation-controlled nanowires (NWs), there is limited report until now addressing their orientation-dependent properties in this important one-dimensional material system, where all these are essential information for the deployment of GaSb NWs in various applications. Using CMOS-compatible Pd catalysts, we demonstrated the formation of high-mobility 〈111〉 -oriented GaSb nanowires (NWs) via vapor-solid-solid (VSS) growth by the newly developed surfactant-assisted chemical vapor deposition through a complementary experimental and theoretical approach. In contrast to NWs formed by the conventional vapor-liquid-solid (VLS) mechanism, cylindrical-shaped Pd 5 Ga 4 catalytic seeds were present in our Pd-catalyzed VSS-NWs. As solid catalysts, stoichiometric Pd 5 Ga 4 was found to have the lowest crystal surface energy and thus giving rise to a minimal surface diffusion as well as an optimal in-plane interface orientation at the seed/NW interface for efficient epitaxial NW nucleation. Over 95% high crystalline quality NWs were grown in 〈111〉 orientation for a wide diameter range of between 10 and 70 nm. Back-gated field-effect transistors (FETs) fabricated using the Pd-catalyzed GaSb NWs exhibit a superior peak hole mobility of 330 cm 2 V -1 s -1 , close to the mobility limit for a NW channel diameter of 30 nm with a free carrier concentration of 10 18 cm -3 . This suggests that the NWs have excellent homogeneity in phase purity, growth orientation, surface morphology and electrical characteristics. Contact printing process was also used to fabricate large-scale assembly of Pd-catalyzed GaSb NW parallel arrays, confirming the potential constructions and applications of these high-performance electronic devices.

Original languageEnglish
Title of host publication2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings
EditorsTing-Ao Tang, Fan Ye, Yu-Long Jiang
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781538644409
DOIs
Publication statusPublished - Dec 5 2018
Externally publishedYes
Event14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Qingdao, China
Duration: Oct 31 2018Nov 3 2018

Publication series

Name2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings

Conference

Conference14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018
Country/TerritoryChina
CityQingdao
Period10/31/1811/3/18

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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