Orientation-controlled Si thin films on insulating substrates by Al-induced crystallization combined with interfacial-oxide layer modulation

Masashi Kurosawa, Naoyuki Kawabata, Taizoh Sadoh, Masanobu Miyao

Research output: Contribution to journalArticlepeer-review

114 Citations (Scopus)

Abstract

Orientation-controlled Si films on transparent insulating substrates are strongly desired to achieve high-efficiency thin-film solar cells. We have developed the interfacial-oxide layer modulated Al-induced low temperature (<450 °C) crystallization technique, which enables dominantly (001) or (111)-oriented Si films with large grains (20-100 μm). These results are qualitatively explained on the basis of a model considering the phase transition of the interfacial Al oxide layers. This process provides the orientation-controlled Si templates on insulating substrates, which enables successive high quality epitaxial growth necessary for advanced Si thin-film solar cells.

Original languageEnglish
Article number132103
JournalApplied Physics Letters
Volume95
Issue number13
DOIs
Publication statusPublished - Oct 12 2009

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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