Orientation dependency of dislocation generation in Si growth process

Karolin Jiptner, Yoshiji Miyamura, Bing Gao, Hirofumi Harada, Koichi Kakimoto, Takashi Sekiguchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In an attempt to understand how and where dislocations are introduced into Si ingots bytemperature gradients, bulk dislocation-free FZ crystals are exposed to temperature gradients similar tothose in Bridgman Si crystal growth. This heat treatment introduces dislocations, which were analyzedusing X-ray topography (XRT) and Scanning InfraRedPolariscopy (SIRP). Hereby, the orientationdependency is taken into account and ingots in (001) and (111) growth orientation are evaluated inthis work. It can be found that the dislocation generation takes place at similar regions of the crystaland is independent of orientation, however, their propagation and multiplication differs. This leads toan overall different shape of the dislocation network. Especially intriguing are the long slip lines inthe (111)-crystal, which cannot be found in the (001)-crystal. This suggests a different magnitude ofslip propagation depending on the sample orientation. This effect should be explained by a differentactivation of slip systems and is discussed in the paper.

Original languageEnglish
Title of host publicationGettering and Defect Engineering in Semiconductor Technology XVI
EditorsPeter Pichler, Peter Pichler
PublisherTrans Tech Publications Ltd
Pages15-20
Number of pages6
ISBN (Print)9783038356080
DOIs
Publication statusPublished - Jan 1 2016
Event16th International Conference on Gettering and Defect Engineering in Semiconductor Technology, GADEST 2015 - Bad Staffelstein, Germany
Duration: Sep 20 2015Sep 25 2015

Publication series

NameSolid State Phenomena
Volume242
ISSN (Electronic)1662-9779

Other

Other16th International Conference on Gettering and Defect Engineering in Semiconductor Technology, GADEST 2015
CountryGermany
CityBad Staffelstein
Period9/20/159/25/15

Fingerprint

Ingots
Dislocations (crystals)
Crystals
ingots
Crystallization
Crystal growth
slip
Thermal gradients
Topography
crystals
Heat treatment
propagation
Scanning
X rays
multiplication
crystal growth
temperature gradients
topography
heat treatment
gradients

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Jiptner, K., Miyamura, Y., Gao, B., Harada, H., Kakimoto, K., & Sekiguchi, T. (2016). Orientation dependency of dislocation generation in Si growth process. In P. Pichler, & P. Pichler (Eds.), Gettering and Defect Engineering in Semiconductor Technology XVI (pp. 15-20). (Solid State Phenomena; Vol. 242). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/SSP.242.15

Orientation dependency of dislocation generation in Si growth process. / Jiptner, Karolin; Miyamura, Yoshiji; Gao, Bing; Harada, Hirofumi; Kakimoto, Koichi; Sekiguchi, Takashi.

Gettering and Defect Engineering in Semiconductor Technology XVI. ed. / Peter Pichler; Peter Pichler. Trans Tech Publications Ltd, 2016. p. 15-20 (Solid State Phenomena; Vol. 242).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Jiptner, K, Miyamura, Y, Gao, B, Harada, H, Kakimoto, K & Sekiguchi, T 2016, Orientation dependency of dislocation generation in Si growth process. in P Pichler & P Pichler (eds), Gettering and Defect Engineering in Semiconductor Technology XVI. Solid State Phenomena, vol. 242, Trans Tech Publications Ltd, pp. 15-20, 16th International Conference on Gettering and Defect Engineering in Semiconductor Technology, GADEST 2015, Bad Staffelstein, Germany, 9/20/15. https://doi.org/10.4028/www.scientific.net/SSP.242.15
Jiptner K, Miyamura Y, Gao B, Harada H, Kakimoto K, Sekiguchi T. Orientation dependency of dislocation generation in Si growth process. In Pichler P, Pichler P, editors, Gettering and Defect Engineering in Semiconductor Technology XVI. Trans Tech Publications Ltd. 2016. p. 15-20. (Solid State Phenomena). https://doi.org/10.4028/www.scientific.net/SSP.242.15
Jiptner, Karolin ; Miyamura, Yoshiji ; Gao, Bing ; Harada, Hirofumi ; Kakimoto, Koichi ; Sekiguchi, Takashi. / Orientation dependency of dislocation generation in Si growth process. Gettering and Defect Engineering in Semiconductor Technology XVI. editor / Peter Pichler ; Peter Pichler. Trans Tech Publications Ltd, 2016. pp. 15-20 (Solid State Phenomena).
@inproceedings{75b937adc68b43cba6943f7798b5dfc2,
title = "Orientation dependency of dislocation generation in Si growth process",
abstract = "In an attempt to understand how and where dislocations are introduced into Si ingots bytemperature gradients, bulk dislocation-free FZ crystals are exposed to temperature gradients similar tothose in Bridgman Si crystal growth. This heat treatment introduces dislocations, which were analyzedusing X-ray topography (XRT) and Scanning InfraRedPolariscopy (SIRP). Hereby, the orientationdependency is taken into account and ingots in (001) and (111) growth orientation are evaluated inthis work. It can be found that the dislocation generation takes place at similar regions of the crystaland is independent of orientation, however, their propagation and multiplication differs. This leads toan overall different shape of the dislocation network. Especially intriguing are the long slip lines inthe (111)-crystal, which cannot be found in the (001)-crystal. This suggests a different magnitude ofslip propagation depending on the sample orientation. This effect should be explained by a differentactivation of slip systems and is discussed in the paper.",
author = "Karolin Jiptner and Yoshiji Miyamura and Bing Gao and Hirofumi Harada and Koichi Kakimoto and Takashi Sekiguchi",
year = "2016",
month = "1",
day = "1",
doi = "10.4028/www.scientific.net/SSP.242.15",
language = "English",
isbn = "9783038356080",
series = "Solid State Phenomena",
publisher = "Trans Tech Publications Ltd",
pages = "15--20",
editor = "Peter Pichler and Peter Pichler",
booktitle = "Gettering and Defect Engineering in Semiconductor Technology XVI",

}

TY - GEN

T1 - Orientation dependency of dislocation generation in Si growth process

AU - Jiptner, Karolin

AU - Miyamura, Yoshiji

AU - Gao, Bing

AU - Harada, Hirofumi

AU - Kakimoto, Koichi

AU - Sekiguchi, Takashi

PY - 2016/1/1

Y1 - 2016/1/1

N2 - In an attempt to understand how and where dislocations are introduced into Si ingots bytemperature gradients, bulk dislocation-free FZ crystals are exposed to temperature gradients similar tothose in Bridgman Si crystal growth. This heat treatment introduces dislocations, which were analyzedusing X-ray topography (XRT) and Scanning InfraRedPolariscopy (SIRP). Hereby, the orientationdependency is taken into account and ingots in (001) and (111) growth orientation are evaluated inthis work. It can be found that the dislocation generation takes place at similar regions of the crystaland is independent of orientation, however, their propagation and multiplication differs. This leads toan overall different shape of the dislocation network. Especially intriguing are the long slip lines inthe (111)-crystal, which cannot be found in the (001)-crystal. This suggests a different magnitude ofslip propagation depending on the sample orientation. This effect should be explained by a differentactivation of slip systems and is discussed in the paper.

AB - In an attempt to understand how and where dislocations are introduced into Si ingots bytemperature gradients, bulk dislocation-free FZ crystals are exposed to temperature gradients similar tothose in Bridgman Si crystal growth. This heat treatment introduces dislocations, which were analyzedusing X-ray topography (XRT) and Scanning InfraRedPolariscopy (SIRP). Hereby, the orientationdependency is taken into account and ingots in (001) and (111) growth orientation are evaluated inthis work. It can be found that the dislocation generation takes place at similar regions of the crystaland is independent of orientation, however, their propagation and multiplication differs. This leads toan overall different shape of the dislocation network. Especially intriguing are the long slip lines inthe (111)-crystal, which cannot be found in the (001)-crystal. This suggests a different magnitude ofslip propagation depending on the sample orientation. This effect should be explained by a differentactivation of slip systems and is discussed in the paper.

UR - http://www.scopus.com/inward/record.url?scp=84953931465&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84953931465&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/SSP.242.15

DO - 10.4028/www.scientific.net/SSP.242.15

M3 - Conference contribution

SN - 9783038356080

T3 - Solid State Phenomena

SP - 15

EP - 20

BT - Gettering and Defect Engineering in Semiconductor Technology XVI

A2 - Pichler, Peter

A2 - Pichler, Peter

PB - Trans Tech Publications Ltd

ER -