Orientation of Bi4Ti3O12-based ferroelectric thin films prepared on various kinds of substrates by metalorganic chemical vapor deposition

T. Watanabe, K. Saito, H. Funakubo

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

La- and V-substituted thin films of Bi4Ti3O12 (Bi3.25,La0.75)(Ti2.97,V0.03) O12 (BLTV) were prepared by metalorganic chemical vapor deposition on (1 1 1)Ir/TiO2/SiO2/Si, (1 1 1)Pt/TiO2/SiO2/Si, and (1 1 1)Pt/Ti/SiO2/Si substrates at 600°C. Film orientation was investigated by X-ray reciprocal space mapping together with the conventional X-ray 2θ-θ scan. All the films consisted of a single phase of BLTV and showed mainly (0 0 1)- and (1 1 7)-orientations on a 2θ-θ scan. However, it was confirmed that the weak (1 1 7)-, strong (1 0 4)-, and (1 1 1)-centered orientations; (1 1 0), (1 1 1), and (1 1 2) orientations, were ascertained for the films deposited on (1 1 1)Pt/TiO2/SiO2/Si, (1 1 1)Pt/Ti/SiO2/Si, and (1 1 1)Ir/TiO2/SiO2/Si substrates, respectively, by the X-ray reciprocal space-mapping measurement. These tendencies were in response to the ferroelectric property of the film. As a result, orientation of the film strongly depended on the kinds of substrates and the X-ray reciprocal space mapping is the useful method to investigate the orientation of the bismuth-layer-structured ferroelectric thin films.

Original languageEnglish
Pages (from-to)389-393
Number of pages5
JournalJournal of Crystal Growth
Volume235
Issue number1-4
DOIs
Publication statusPublished - Feb 1 2002
Externally publishedYes

Fingerprint

Ferroelectric thin films
Metallorganic chemical vapor deposition
metalorganic chemical vapor deposition
Substrates
thin films
X rays
x rays
Bismuth
Ferroelectric materials
bismuth
tendencies
Thin films
TiO2-SiO2

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Orientation of Bi4Ti3O12-based ferroelectric thin films prepared on various kinds of substrates by metalorganic chemical vapor deposition. / Watanabe, T.; Saito, K.; Funakubo, H.

In: Journal of Crystal Growth, Vol. 235, No. 1-4, 01.02.2002, p. 389-393.

Research output: Contribution to journalArticle

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AB - La- and V-substituted thin films of Bi4Ti3O12 (Bi3.25,La0.75)(Ti2.97,V0.03) O12 (BLTV) were prepared by metalorganic chemical vapor deposition on (1 1 1)Ir/TiO2/SiO2/Si, (1 1 1)Pt/TiO2/SiO2/Si, and (1 1 1)Pt/Ti/SiO2/Si substrates at 600°C. Film orientation was investigated by X-ray reciprocal space mapping together with the conventional X-ray 2θ-θ scan. All the films consisted of a single phase of BLTV and showed mainly (0 0 1)- and (1 1 7)-orientations on a 2θ-θ scan. However, it was confirmed that the weak (1 1 7)-, strong (1 0 4)-, and (1 1 1)-centered orientations; (1 1 0), (1 1 1), and (1 1 2) orientations, were ascertained for the films deposited on (1 1 1)Pt/TiO2/SiO2/Si, (1 1 1)Pt/Ti/SiO2/Si, and (1 1 1)Ir/TiO2/SiO2/Si substrates, respectively, by the X-ray reciprocal space-mapping measurement. These tendencies were in response to the ferroelectric property of the film. As a result, orientation of the film strongly depended on the kinds of substrates and the X-ray reciprocal space mapping is the useful method to investigate the orientation of the bismuth-layer-structured ferroelectric thin films.

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