Orientation stabilized rapid melting growth of thin (100) ge-on-insulator structures and their implementation in Homoepitaxial growth

Mohammad Anisuzzaman, Shunpei Muta, Abdul Manaf Hashim, Taizoh Sadoh

Research output: Contribution to journalArticle

Abstract

Integration of Ge on the Si platforms is essential for the development of next generation large-scale integrated circuits. The Ge-on-insulator (GOI) structure is suited for the realization of high-mobility transistors channels and as epitaxial templates for optoelectronic and spintronic materials. In this work, the fabrication of thin (∼50 nm) (100) GOI by the rapid melting growth process has been investigated. Growth with unstable crystal orientation has been observed in wide (≥1 μm) GOI strips. However, orientation stabilized growth was achieved in narrow strips (∼0.5 μm). Further stabilization of growth orientation was observed in mesh patterned growth with GOI width of 1 μm. Epitaxial growth of Ge was performed on the above structures and the formation of uniform epitaxial layer was demonstrated.

Original languageEnglish
Pages (from-to)63-67
Number of pages5
JournalResearch Reports on Information Science and Electrical Engineering of Kyushu University
Volume18
Issue number2
Publication statusPublished - Jan 1 2013

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Melting
Magnetoelectronics
Epitaxial layers
Epitaxial growth
Crystal orientation
Optoelectronic devices
Integrated circuits
Transistors
Stabilization
Fabrication

All Science Journal Classification (ASJC) codes

  • Computer Science(all)
  • Electrical and Electronic Engineering

Cite this

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abstract = "Integration of Ge on the Si platforms is essential for the development of next generation large-scale integrated circuits. The Ge-on-insulator (GOI) structure is suited for the realization of high-mobility transistors channels and as epitaxial templates for optoelectronic and spintronic materials. In this work, the fabrication of thin (∼50 nm) (100) GOI by the rapid melting growth process has been investigated. Growth with unstable crystal orientation has been observed in wide (≥1 μm) GOI strips. However, orientation stabilized growth was achieved in narrow strips (∼0.5 μm). Further stabilization of growth orientation was observed in mesh patterned growth with GOI width of 1 μm. Epitaxial growth of Ge was performed on the above structures and the formation of uniform epitaxial layer was demonstrated.",
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AU - Anisuzzaman, Mohammad

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AU - Hashim, Abdul Manaf

AU - Sadoh, Taizoh

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AB - Integration of Ge on the Si platforms is essential for the development of next generation large-scale integrated circuits. The Ge-on-insulator (GOI) structure is suited for the realization of high-mobility transistors channels and as epitaxial templates for optoelectronic and spintronic materials. In this work, the fabrication of thin (∼50 nm) (100) GOI by the rapid melting growth process has been investigated. Growth with unstable crystal orientation has been observed in wide (≥1 μm) GOI strips. However, orientation stabilized growth was achieved in narrow strips (∼0.5 μm). Further stabilization of growth orientation was observed in mesh patterned growth with GOI width of 1 μm. Epitaxial growth of Ge was performed on the above structures and the formation of uniform epitaxial layer was demonstrated.

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