Origin of carrier lifetime degradation in floating-zone silicon during a high-temperature process for insulated gate bipolar transistor

Ryo Yokogawa, Hiroto Kobayashi, Yohichiroh Numasawa, Atsushi Ogura, Shin Ichi Nishizawa, Takuya Saraya, Kazuo Ito, Toshihiko Takakura, Shinichi Suzuki, Munetoshi Fukui, Kiyoshi Takeuchi, Toshiro Hiramoto

Research output: Contribution to journalArticlepeer-review

Abstract

We report on the relationship between carrier lifetime degradation of floating-zone silicon (FZ Si) and the guard ring formation process for silicon integrated gate bipolar transistor (Si-IGBT). A clear carrier lifetime degradation was observed through the guard ring oxidation and annealing processes for Si-IGBT and showed interstitial oxygen (Oi) concentration dependence, which was obtained by Fourier transform infrared absorption spectroscopy. Based on the carrier lifetime measurements through the step etching of the FZ Si substrate, it has been suggested that the carrier lifetime degradation is not only caused by the Oi itself near the FZ Si surface region but also the other defects induced by the Oi injection. Diffused interstitial Si atoms kicked-out by the Oi into the FZ Si substrate, which has a longer diffusion length than Oi, can be considered to be the origin of the carrier lifetime degradation.

Original languageEnglish
Article number115503
JournalJapanese journal of applied physics
Volume59
Issue number11
DOIs
Publication statusPublished - Nov 2020

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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