Origin of external quantum efficiency degradation in organic light-emitting diodes with a DC magnetron sputtered cathode

Hiroshi Fujimoto, Takuya Miyayama, Noriaki Sanada, Chihaya Adachi

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

This paper characterizes changes in organic light-emitting diodes to better understand the origin of the decrease in external quantum efficiency (ηext) when switching the cathode deposition method from evaporation to DC magnetron sputtering. An increase of driving voltage and a hole-barrier-dependent decrease of ηext when the Al cathode is sputtered suggest that disruption of carrier balance and penetration of holes from the emissive layer (EML) into the electron transport layer (ETL) are significant sources of the device degradation. When the ETL was doped with Li, degradation was suppressed and the increase in driving voltage was drastically reduced although ηext still decreased by 5%-7%. Analysis of the films by time-of-flight secondary ion mass spectrometry indicates that Li diffuses into the EML when Al is sputtered, and Li is shown to act as an exciton quencher that can decrease ηext. Doping of the ETL is also used to significantly suppress the performance reduction with sputtered cathodes even when using a phosphorescent emitter having high ηext.

Original languageEnglish
Article number060603
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume32
Issue number6
DOIs
Publication statusPublished - Nov 1 2014

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Organic light emitting diodes (OLED)
Quantum efficiency
quantum efficiency
Cathodes
light emitting diodes
cathodes
direct current
degradation
Degradation
Electric potential
Secondary ion mass spectrometry
Excitons
Magnetron sputtering
Evaporation
Doping (additives)
electrons
electric potential
secondary ion mass spectrometry
magnetron sputtering
emitters

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Origin of external quantum efficiency degradation in organic light-emitting diodes with a DC magnetron sputtered cathode. / Fujimoto, Hiroshi; Miyayama, Takuya; Sanada, Noriaki; Adachi, Chihaya.

In: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 32, No. 6, 060603, 01.11.2014.

Research output: Contribution to journalArticle

@article{52a1e15c8b5647f5a9a28875b69f771a,
title = "Origin of external quantum efficiency degradation in organic light-emitting diodes with a DC magnetron sputtered cathode",
abstract = "This paper characterizes changes in organic light-emitting diodes to better understand the origin of the decrease in external quantum efficiency (ηext) when switching the cathode deposition method from evaporation to DC magnetron sputtering. An increase of driving voltage and a hole-barrier-dependent decrease of ηext when the Al cathode is sputtered suggest that disruption of carrier balance and penetration of holes from the emissive layer (EML) into the electron transport layer (ETL) are significant sources of the device degradation. When the ETL was doped with Li, degradation was suppressed and the increase in driving voltage was drastically reduced although ηext still decreased by 5{\%}-7{\%}. Analysis of the films by time-of-flight secondary ion mass spectrometry indicates that Li diffuses into the EML when Al is sputtered, and Li is shown to act as an exciton quencher that can decrease ηext. Doping of the ETL is also used to significantly suppress the performance reduction with sputtered cathodes even when using a phosphorescent emitter having high ηext.",
author = "Hiroshi Fujimoto and Takuya Miyayama and Noriaki Sanada and Chihaya Adachi",
year = "2014",
month = "11",
day = "1",
doi = "10.1116/1.4897920",
language = "English",
volume = "32",
journal = "Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics",
issn = "2166-2746",
publisher = "AVS Science and Technology Society",
number = "6",

}

TY - JOUR

T1 - Origin of external quantum efficiency degradation in organic light-emitting diodes with a DC magnetron sputtered cathode

AU - Fujimoto, Hiroshi

AU - Miyayama, Takuya

AU - Sanada, Noriaki

AU - Adachi, Chihaya

PY - 2014/11/1

Y1 - 2014/11/1

N2 - This paper characterizes changes in organic light-emitting diodes to better understand the origin of the decrease in external quantum efficiency (ηext) when switching the cathode deposition method from evaporation to DC magnetron sputtering. An increase of driving voltage and a hole-barrier-dependent decrease of ηext when the Al cathode is sputtered suggest that disruption of carrier balance and penetration of holes from the emissive layer (EML) into the electron transport layer (ETL) are significant sources of the device degradation. When the ETL was doped with Li, degradation was suppressed and the increase in driving voltage was drastically reduced although ηext still decreased by 5%-7%. Analysis of the films by time-of-flight secondary ion mass spectrometry indicates that Li diffuses into the EML when Al is sputtered, and Li is shown to act as an exciton quencher that can decrease ηext. Doping of the ETL is also used to significantly suppress the performance reduction with sputtered cathodes even when using a phosphorescent emitter having high ηext.

AB - This paper characterizes changes in organic light-emitting diodes to better understand the origin of the decrease in external quantum efficiency (ηext) when switching the cathode deposition method from evaporation to DC magnetron sputtering. An increase of driving voltage and a hole-barrier-dependent decrease of ηext when the Al cathode is sputtered suggest that disruption of carrier balance and penetration of holes from the emissive layer (EML) into the electron transport layer (ETL) are significant sources of the device degradation. When the ETL was doped with Li, degradation was suppressed and the increase in driving voltage was drastically reduced although ηext still decreased by 5%-7%. Analysis of the films by time-of-flight secondary ion mass spectrometry indicates that Li diffuses into the EML when Al is sputtered, and Li is shown to act as an exciton quencher that can decrease ηext. Doping of the ETL is also used to significantly suppress the performance reduction with sputtered cathodes even when using a phosphorescent emitter having high ηext.

UR - http://www.scopus.com/inward/record.url?scp=84929417661&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84929417661&partnerID=8YFLogxK

U2 - 10.1116/1.4897920

DO - 10.1116/1.4897920

M3 - Article

AN - SCOPUS:84929417661

VL - 32

JO - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

JF - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

SN - 2166-2746

IS - 6

M1 - 060603

ER -