Origin of rectification in boron nitride heterojunctions to silicon

Kungen Teii, Takuro Hori, Yusei Mizusako, Seiichiro Matsumoto

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Cubic and hexagonal boron nitride (cBN and hBN) heterojunctions to n-type Si are fabricated under low-energy ion bombardment by inductively coupled plasma-enhanced chemical vapor deposition using the chemistry of fluorine. The sp2-bonded BN/Si heterojunction shows no rectification, while the cBN/sp2BN/Si heterojunction has rectification properties analogue to typical p-n junction diodes despite a large thickness (∼130 nm) of the sp2BN interlayer. The current-voltage characteristics at temperatures up to 573 K are governed by thermal excitation of carriers, and mostly described with the ideal diode equation and the Frenkel-Poole emission model at low and high bias voltages, respectively. The rectification in the cBN/sp 2BN/Si heterojunction is caused by a bias-dependent change in the barrier height for holes arising from stronger p-type conduction in the cBN layer and enhanced with the thick sp2BN interlayer for impeding the reverse current flow at defect levels mainly associated with grain boundaries.

Original languageEnglish
Pages (from-to)2535-2539
Number of pages5
JournalACS Applied Materials and Interfaces
Volume5
Issue number7
DOIs
Publication statusPublished - Apr 10 2013

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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