Origin of reverse leakage current in n-type nanocrystalline diamond/p-type silicon heterojunction diodes

Tomohiro Ikeda, Kungen Tsutsui

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

The reverse leakage current in n -type nanodiamond film/ p -type silicon wafer heterojunction diodes is examined as a function of the film conductivity. We observe that as the delocalization of carriers in the films becomes stronger, the leakage current becomes larger (from 10-3 to 101 A cm-2). The major leakage source is attributed to the minority carriers from the π defect bands introduced by sp2 carbon. Both a current injection barrier and a dielectric barrier at the interface are found to be small (∼0.6 eV). The simultaneous reduction in leakage current and turn-on voltage for low-loss diodes needs optimization of the interfacial valence band connection.

Original languageEnglish
Article number072104
JournalApplied Physics Letters
Volume94
Issue number7
DOIs
Publication statusPublished - Feb 27 2009

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heterojunctions
leakage
diamonds
diodes
silicon
minority carriers
wafers
injection
valence
conductivity
optimization
carbon
defects
electric potential

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Origin of reverse leakage current in n-type nanocrystalline diamond/p-type silicon heterojunction diodes. / Ikeda, Tomohiro; Tsutsui, Kungen.

In: Applied Physics Letters, Vol. 94, No. 7, 072104, 27.02.2009.

Research output: Contribution to journalArticle

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