Abstract
Main factors which determine the size, the standard deviations which show the degree of the size fluctuations for the average dot height and diameter, and density in ZnSe self-organized quantum dots (QDs) grown on ZnS layers were studied. By lowering the growth temperature the QDs average size and its standard deviation decreased and the density increased due to the slower surface migration. With the application of the scaling theory, it was revealed that the normalized size distributions were uniquely determined by the nucleation process although the apparent standard deviations of the QD sizes were dependent on the growth temperature. The influence of surface roughness of the underneath layer on the formation of the relations of the dot height and diameter was also examined. It was shown that the fluctuation of the surface potential contributes significantly to the apparent standard deviations of ZnSe self-organized QDs sizes.
| Original language | English |
|---|---|
| Pages (from-to) | 515-519 |
| Number of pages | 5 |
| Journal | Journal of Electronic Materials |
| Volume | 29 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - Jan 1 2000 |
| Externally published | Yes |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
Cite this
Origin of size distributions in ZnSe self-organized quantum dots grown on ZnS layers. / Tawara, Takehiko; Satoru, Tanaka; Kumano, Hidekazu; Suemune, Ikuo.
In: Journal of Electronic Materials, Vol. 29, No. 5, 01.01.2000, p. 515-519.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Origin of size distributions in ZnSe self-organized quantum dots grown on ZnS layers
AU - Tawara, Takehiko
AU - Satoru, Tanaka
AU - Kumano, Hidekazu
AU - Suemune, Ikuo
PY - 2000/1/1
Y1 - 2000/1/1
N2 - Main factors which determine the size, the standard deviations which show the degree of the size fluctuations for the average dot height and diameter, and density in ZnSe self-organized quantum dots (QDs) grown on ZnS layers were studied. By lowering the growth temperature the QDs average size and its standard deviation decreased and the density increased due to the slower surface migration. With the application of the scaling theory, it was revealed that the normalized size distributions were uniquely determined by the nucleation process although the apparent standard deviations of the QD sizes were dependent on the growth temperature. The influence of surface roughness of the underneath layer on the formation of the relations of the dot height and diameter was also examined. It was shown that the fluctuation of the surface potential contributes significantly to the apparent standard deviations of ZnSe self-organized QDs sizes.
AB - Main factors which determine the size, the standard deviations which show the degree of the size fluctuations for the average dot height and diameter, and density in ZnSe self-organized quantum dots (QDs) grown on ZnS layers were studied. By lowering the growth temperature the QDs average size and its standard deviation decreased and the density increased due to the slower surface migration. With the application of the scaling theory, it was revealed that the normalized size distributions were uniquely determined by the nucleation process although the apparent standard deviations of the QD sizes were dependent on the growth temperature. The influence of surface roughness of the underneath layer on the formation of the relations of the dot height and diameter was also examined. It was shown that the fluctuation of the surface potential contributes significantly to the apparent standard deviations of ZnSe self-organized QDs sizes.
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UR - http://www.scopus.com/inward/citedby.url?scp=0033741117&partnerID=8YFLogxK
U2 - 10.1007/s11664-000-0037-0
DO - 10.1007/s11664-000-0037-0
M3 - Article
AN - SCOPUS:0033741117
VL - 29
SP - 515
EP - 519
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
SN - 0361-5235
IS - 5
ER -