Si-MOSFETs with the breakdown voltage of over 1000 V were demonstrated, for the first time, realizing low on-resistance below the theoretical Si-limit. The fabricated MOSFETs have Semi-Superjunction (SemiSJ) structure, which is the combination of superjunction (SJ) structure and n-Bottom Assisted Layer (BAL). The SemiSJ MOSFETs realize both the high breakdown voltage of 1100 and 1400 V and the low on-resistance of 54 and 163 mΩcm2, respectively. The fabrication process for the high voltage SemiSJ-MOSFET was completely equivalent to a 600-V class SJ-MOSFET process, which implies that a single optimized process for forming SJ structure for 600 V-class MOSFET can be used for a wide voltage range extending up to 1200 V MOSFET. These results show the possibility of new Si Power-MOSFET with higher application voltage range.
|Number of pages||4|
|Journal||Proceedings of the International Symposium on Power Semiconductor Devices and ICs|
|Publication status||Published - Nov 22 2005|
|Event||17th International Symposium on Power Semiconductor Devices and ICs, ISPSD'05 - Sanata Barbara, CA, United States|
Duration: May 23 2005 → May 26 2005
All Science Journal Classification (ASJC) codes