Over l000V semi-superjunction MOSFET with ultra-low on-resistance blow the Si-limit

Wataru Saito, Ichiro Omura, Satoshi Aida, Shigeo Koduki, Masaru Izumisawa, Hironori Yoshioka, Tsuneo Ogura

Research output: Contribution to journalConference article

13 Citations (Scopus)

Abstract

Si-MOSFETs with the breakdown voltage of over 1000 V were demonstrated, for the first time, realizing low on-resistance below the theoretical Si-limit. The fabricated MOSFETs have Semi-Superjunction (SemiSJ) structure, which is the combination of superjunction (SJ) structure and n-Bottom Assisted Layer (BAL). The SemiSJ MOSFETs realize both the high breakdown voltage of 1100 and 1400 V and the low on-resistance of 54 and 163 mΩcm2, respectively. The fabrication process for the high voltage SemiSJ-MOSFET was completely equivalent to a 600-V class SJ-MOSFET process, which implies that a single optimized process for forming SJ structure for 600 V-class MOSFET can be used for a wide voltage range extending up to 1200 V MOSFET. These results show the possibility of new Si Power-MOSFET with higher application voltage range.

Original languageEnglish
Article numberHV1-1
Pages (from-to)27-30
Number of pages4
JournalProceedings of the International Symposium on Power Semiconductor Devices and ICs
Publication statusPublished - Nov 22 2005
Externally publishedYes
Event17th International Symposium on Power Semiconductor Devices and ICs, ISPSD'05 - Sanata Barbara, CA, United States
Duration: May 23 2005May 26 2005

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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