Oxide ion conductivity in doped Ga based perovskite type oxide

Tatsumi Ishihara, Hideaki Matsuda, Mohamad Azmi Bin Bustam, Yusaku Takita

Research output: Contribution to journalArticlepeer-review

92 Citations (Scopus)

Abstract

Oxide ion conductivity of Ga based perovskite type oxides, LnGaO3 (Ln = Nd, La) and its related oxide, A3Ga2O6 (A = Ba and St) was investigated. Oxide ion transference number is almost 1.0 on Sr3Ga2O6 or Ba3Ga2O6. However, electrical conductivity of these A3Ga2O6 system oxides was lower than log (σ/S cm-1) = - 3 due to the low solubility of the aliovalent cations. On the other hand, doped perovskite type oxide of NdGaO3 and LaGaO3 exhibited a high electrical conductivity and the transference number of oxide ion was higher than 0.9 in the oxygen partial pressure range from PO2 = 1 to 10-21 atm. In particular, Ca and Mg doped NdGaO3 exhibited a high oxide ion conductivity in similar with LaGaO3 based oxide.

Original languageEnglish
Pages (from-to)197-201
Number of pages5
JournalSolid State Ionics
Volume86-88
Issue numberPART 1
DOIs
Publication statusPublished - Jul 1996
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Oxide ion conductivity in doped Ga based perovskite type oxide'. Together they form a unique fingerprint.

Cite this