TY - JOUR
T1 - Oxide ion conductivity in doped NdBaInO4
AU - Ishihara, Tatsumi
AU - Yan, Yu
AU - Sakai, Takaaki
AU - Ida, Shintaro
N1 - Funding Information:
Present work was supported in part by Grant-in-Aid for Scientific Research (S) No. 24226016 and the Advanced Low Carbon Technology Research and Development Program (ALCA) .
Publisher Copyright:
© 2016 Elsevier B.V. All rights reserved.
PY - 2016/5/1
Y1 - 2016/5/1
N2 - Oxide ion conductivity in doped NdBaInO4 with new type oxygen deficient perovskite was studied and it was found that doping Ti to In site is effective for increasing the oxide ion conductivity. Since increasing amount of doped Ti increased the partial electronic conductivity under reducing atmosphere, the optimized amount of Ti doped for In site exists around 20 mol%, namely, NdBaIn0.8Ti0.2O4. The estimated transport number of oxide ion in this optimized composition was higher than 0.8 from H2-O2 oxygen concentration cell, however, it is lower than 0.1 from N2-O2 cell because the hole conduction is dominant in high PO2 range. Consequently, although the oxide ion conductivity is around log(σ/Scm- 1) = - 2.5 at 1173 K, this study reveals that Ti doped NdBaInO4 which is unique edge oxygen facing structure, is a new family of oxide ion conductor.
AB - Oxide ion conductivity in doped NdBaInO4 with new type oxygen deficient perovskite was studied and it was found that doping Ti to In site is effective for increasing the oxide ion conductivity. Since increasing amount of doped Ti increased the partial electronic conductivity under reducing atmosphere, the optimized amount of Ti doped for In site exists around 20 mol%, namely, NdBaIn0.8Ti0.2O4. The estimated transport number of oxide ion in this optimized composition was higher than 0.8 from H2-O2 oxygen concentration cell, however, it is lower than 0.1 from N2-O2 cell because the hole conduction is dominant in high PO2 range. Consequently, although the oxide ion conductivity is around log(σ/Scm- 1) = - 2.5 at 1173 K, this study reveals that Ti doped NdBaInO4 which is unique edge oxygen facing structure, is a new family of oxide ion conductor.
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U2 - 10.1016/j.ssi.2016.01.011
DO - 10.1016/j.ssi.2016.01.011
M3 - Article
AN - SCOPUS:84957827657
SN - 0167-2738
VL - 288
SP - 262
EP - 265
JO - Solid State Ionics
JF - Solid State Ionics
ER -