Oxide ionic and electronic conduction in Ni-doped LaGaO3-based oxide

Tatsumi Ishihara, Shinji Ishikawa, Kei Hosoi, Hiroyasu Nishiguchi, Yusaku Takita

Research output: Contribution to journalConference article

17 Citations (Scopus)

Abstract

Partial electronic conduction in Ni-doped LaGaO3-based oxide was investigated by using the ion-blocking method. It was seen that the hole and the electronic conduction originated from doped Ni becomes dominant with decreasing temperature and also with increasing Ni content. PO2 dependences of hole and electronic conduction decrease with increasing Ni content and it becomes almost PO2 -1-12 and P O2 -1/12, respectively, at 1073 K when 10 mol% Ni is doped to Ga site. The estimated transport number of oxide ion in Ni-doped LaGaO 3 is always higher than 0.95 in PO2 range from 1 to 10-21 atm, which is the important PO2 range for fuel cell application. Therefore, the main charge carrier is still oxide ion in Ni-doped LaGaO3- Comparing with the partial electronic conduction in Co-doped sample, the electrolyte domain is wider on Ni-doped sample.

Original languageEnglish
Pages (from-to)319-322
Number of pages4
JournalSolid State Ionics
Volume175
Issue number1-4
DOIs
Publication statusPublished - Nov 30 2004
EventFourteenth International Conference on Solid State Ionics - Monterey, CA., United States
Duration: Jun 22 2003Jun 27 2003

Fingerprint

Oxides
Ions
conduction
oxides
electronics
Charge carriers
Electrolytes
ions
Fuel cells
fuel cells
charge carriers
electrolytes
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Electrochemistry
  • Physical and Theoretical Chemistry
  • Energy Engineering and Power Technology
  • Materials Chemistry
  • Condensed Matter Physics

Cite this

Oxide ionic and electronic conduction in Ni-doped LaGaO3-based oxide. / Ishihara, Tatsumi; Ishikawa, Shinji; Hosoi, Kei; Nishiguchi, Hiroyasu; Takita, Yusaku.

In: Solid State Ionics, Vol. 175, No. 1-4, 30.11.2004, p. 319-322.

Research output: Contribution to journalConference article

Ishihara, T, Ishikawa, S, Hosoi, K, Nishiguchi, H & Takita, Y 2004, 'Oxide ionic and electronic conduction in Ni-doped LaGaO3-based oxide', Solid State Ionics, vol. 175, no. 1-4, pp. 319-322. https://doi.org/10.1016/j.ssi.2004.03.036
Ishihara, Tatsumi ; Ishikawa, Shinji ; Hosoi, Kei ; Nishiguchi, Hiroyasu ; Takita, Yusaku. / Oxide ionic and electronic conduction in Ni-doped LaGaO3-based oxide. In: Solid State Ionics. 2004 ; Vol. 175, No. 1-4. pp. 319-322.
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abstract = "Partial electronic conduction in Ni-doped LaGaO3-based oxide was investigated by using the ion-blocking method. It was seen that the hole and the electronic conduction originated from doped Ni becomes dominant with decreasing temperature and also with increasing Ni content. PO2 dependences of hole and electronic conduction decrease with increasing Ni content and it becomes almost PO2 -1-12 and P O2 -1/12, respectively, at 1073 K when 10 mol{\%} Ni is doped to Ga site. The estimated transport number of oxide ion in Ni-doped LaGaO 3 is always higher than 0.95 in PO2 range from 1 to 10-21 atm, which is the important PO2 range for fuel cell application. Therefore, the main charge carrier is still oxide ion in Ni-doped LaGaO3- Comparing with the partial electronic conduction in Co-doped sample, the electrolyte domain is wider on Ni-doped sample.",
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AU - Ishikawa, Shinji

AU - Hosoi, Kei

AU - Nishiguchi, Hiroyasu

AU - Takita, Yusaku

PY - 2004/11/30

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N2 - Partial electronic conduction in Ni-doped LaGaO3-based oxide was investigated by using the ion-blocking method. It was seen that the hole and the electronic conduction originated from doped Ni becomes dominant with decreasing temperature and also with increasing Ni content. PO2 dependences of hole and electronic conduction decrease with increasing Ni content and it becomes almost PO2 -1-12 and P O2 -1/12, respectively, at 1073 K when 10 mol% Ni is doped to Ga site. The estimated transport number of oxide ion in Ni-doped LaGaO 3 is always higher than 0.95 in PO2 range from 1 to 10-21 atm, which is the important PO2 range for fuel cell application. Therefore, the main charge carrier is still oxide ion in Ni-doped LaGaO3- Comparing with the partial electronic conduction in Co-doped sample, the electrolyte domain is wider on Ni-doped sample.

AB - Partial electronic conduction in Ni-doped LaGaO3-based oxide was investigated by using the ion-blocking method. It was seen that the hole and the electronic conduction originated from doped Ni becomes dominant with decreasing temperature and also with increasing Ni content. PO2 dependences of hole and electronic conduction decrease with increasing Ni content and it becomes almost PO2 -1-12 and P O2 -1/12, respectively, at 1073 K when 10 mol% Ni is doped to Ga site. The estimated transport number of oxide ion in Ni-doped LaGaO 3 is always higher than 0.95 in PO2 range from 1 to 10-21 atm, which is the important PO2 range for fuel cell application. Therefore, the main charge carrier is still oxide ion in Ni-doped LaGaO3- Comparing with the partial electronic conduction in Co-doped sample, the electrolyte domain is wider on Ni-doped sample.

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