Oxide ionic and electronic conduction in Ni-doped LaGaO3-based oxide

Tatsumi Ishihara, Shinji Ishikawa, Kei Hosoi, Hiroyasu Nishiguchi, Yusaku Takita

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Abstract

Partial electronic conduction in Ni-doped LaGaO3-based oxide was investigated by using the ion-blocking method. It was seen that the hole and the electronic conduction originated from doped Ni becomes dominant with decreasing temperature and also with increasing Ni content. PO2 dependences of hole and electronic conduction decrease with increasing Ni content and it becomes almost PO2-1-12 and P O2-1/12, respectively, at 1073 K when 10 mol% Ni is doped to Ga site. The estimated transport number of oxide ion in Ni-doped LaGaO 3 is always higher than 0.95 in PO2 range from 1 to 10-21 atm, which is the important PO2 range for fuel cell application. Therefore, the main charge carrier is still oxide ion in Ni-doped LaGaO3- Comparing with the partial electronic conduction in Co-doped sample, the electrolyte domain is wider on Ni-doped sample.

Original languageEnglish
Pages (from-to)319-322
Number of pages4
JournalSolid State Ionics
Volume175
Issue number1-4
DOIs
Publication statusPublished - Nov 30 2004
EventFourteenth International Conference on Solid State Ionics - Monterey, CA., United States
Duration: Jun 22 2003Jun 27 2003

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All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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