Oxide nanowires for nonvolatile memory applications

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

Nanowires provide unique tools for scaling down in semiconductor electronics and the fundamental understanding of nanoscale physical phenomena, which are not accessible in conventional lithography. Resistive random access memory (ReRAM) is an emergent concept in nonvolatile memory to overcome the limitations of flash memory technology; however, its potential scalability and the fundamental nanoscale mechanism have been controversial. This chapter reviews oxide nanowire-based ReRAM. The oxide nanowire allows for ultrasmall device architecture such as a segmented memory cell in a single nanowire and a cross-bar memory cell at a nanowire junction. Furthermore, the nanoscale physical mechanisms of ReRAM are directly extracted by the confined space of the oxide nanowire. First, the memory performance of oxide nanowire ReRAM, including their cell sizes, is discussed, and later, the detailed mechanism, the challenging issues, and the application field of oxide nanowire ReRAM are discussed.

Original languageEnglish
Title of host publicationMagnetic Nano- and Microwires
Subtitle of host publicationDesign, Synthesis, Properties and Applications
PublisherElsevier
Pages489-524
Number of pages36
ISBN (Print)9780081001646
DOIs
Publication statusPublished - May 28 2015

Fingerprint

Nanowires
Data storage equipment
Oxides
Flash memory
Lithography
Scalability
Electronic equipment
Semiconductor materials

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Nagashima, K., & Yanagida, T. (2015). Oxide nanowires for nonvolatile memory applications. In Magnetic Nano- and Microwires: Design, Synthesis, Properties and Applications (pp. 489-524). Elsevier. https://doi.org/10.1016/B978-0-08-100164-6.00016-3

Oxide nanowires for nonvolatile memory applications. / Nagashima, K.; Yanagida, T.

Magnetic Nano- and Microwires: Design, Synthesis, Properties and Applications. Elsevier, 2015. p. 489-524.

Research output: Chapter in Book/Report/Conference proceedingChapter

Nagashima, K & Yanagida, T 2015, Oxide nanowires for nonvolatile memory applications. in Magnetic Nano- and Microwires: Design, Synthesis, Properties and Applications. Elsevier, pp. 489-524. https://doi.org/10.1016/B978-0-08-100164-6.00016-3
Nagashima K, Yanagida T. Oxide nanowires for nonvolatile memory applications. In Magnetic Nano- and Microwires: Design, Synthesis, Properties and Applications. Elsevier. 2015. p. 489-524 https://doi.org/10.1016/B978-0-08-100164-6.00016-3
Nagashima, K. ; Yanagida, T. / Oxide nanowires for nonvolatile memory applications. Magnetic Nano- and Microwires: Design, Synthesis, Properties and Applications. Elsevier, 2015. pp. 489-524
@inbook{17d97538aa204633a46d6a1b736f759c,
title = "Oxide nanowires for nonvolatile memory applications",
abstract = "Nanowires provide unique tools for scaling down in semiconductor electronics and the fundamental understanding of nanoscale physical phenomena, which are not accessible in conventional lithography. Resistive random access memory (ReRAM) is an emergent concept in nonvolatile memory to overcome the limitations of flash memory technology; however, its potential scalability and the fundamental nanoscale mechanism have been controversial. This chapter reviews oxide nanowire-based ReRAM. The oxide nanowire allows for ultrasmall device architecture such as a segmented memory cell in a single nanowire and a cross-bar memory cell at a nanowire junction. Furthermore, the nanoscale physical mechanisms of ReRAM are directly extracted by the confined space of the oxide nanowire. First, the memory performance of oxide nanowire ReRAM, including their cell sizes, is discussed, and later, the detailed mechanism, the challenging issues, and the application field of oxide nanowire ReRAM are discussed.",
author = "K. Nagashima and T. Yanagida",
year = "2015",
month = "5",
day = "28",
doi = "10.1016/B978-0-08-100164-6.00016-3",
language = "English",
isbn = "9780081001646",
pages = "489--524",
booktitle = "Magnetic Nano- and Microwires",
publisher = "Elsevier",
address = "Netherlands",

}

TY - CHAP

T1 - Oxide nanowires for nonvolatile memory applications

AU - Nagashima, K.

AU - Yanagida, T.

PY - 2015/5/28

Y1 - 2015/5/28

N2 - Nanowires provide unique tools for scaling down in semiconductor electronics and the fundamental understanding of nanoscale physical phenomena, which are not accessible in conventional lithography. Resistive random access memory (ReRAM) is an emergent concept in nonvolatile memory to overcome the limitations of flash memory technology; however, its potential scalability and the fundamental nanoscale mechanism have been controversial. This chapter reviews oxide nanowire-based ReRAM. The oxide nanowire allows for ultrasmall device architecture such as a segmented memory cell in a single nanowire and a cross-bar memory cell at a nanowire junction. Furthermore, the nanoscale physical mechanisms of ReRAM are directly extracted by the confined space of the oxide nanowire. First, the memory performance of oxide nanowire ReRAM, including their cell sizes, is discussed, and later, the detailed mechanism, the challenging issues, and the application field of oxide nanowire ReRAM are discussed.

AB - Nanowires provide unique tools for scaling down in semiconductor electronics and the fundamental understanding of nanoscale physical phenomena, which are not accessible in conventional lithography. Resistive random access memory (ReRAM) is an emergent concept in nonvolatile memory to overcome the limitations of flash memory technology; however, its potential scalability and the fundamental nanoscale mechanism have been controversial. This chapter reviews oxide nanowire-based ReRAM. The oxide nanowire allows for ultrasmall device architecture such as a segmented memory cell in a single nanowire and a cross-bar memory cell at a nanowire junction. Furthermore, the nanoscale physical mechanisms of ReRAM are directly extracted by the confined space of the oxide nanowire. First, the memory performance of oxide nanowire ReRAM, including their cell sizes, is discussed, and later, the detailed mechanism, the challenging issues, and the application field of oxide nanowire ReRAM are discussed.

UR - http://www.scopus.com/inward/record.url?scp=85054044555&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85054044555&partnerID=8YFLogxK

U2 - 10.1016/B978-0-08-100164-6.00016-3

DO - 10.1016/B978-0-08-100164-6.00016-3

M3 - Chapter

AN - SCOPUS:85054044555

SN - 9780081001646

SP - 489

EP - 524

BT - Magnetic Nano- and Microwires

PB - Elsevier

ER -