Nanowires provide unique tools for scaling down in semiconductor electronics and the fundamental understanding of nanoscale physical phenomena, which are not accessible in conventional lithography. Resistive random access memory (ReRAM) is an emergent concept in nonvolatile memory to overcome the limitations of flash memory technology; however, its potential scalability and the fundamental nanoscale mechanism have been controversial. This chapter reviews oxide nanowire-based ReRAM. The oxide nanowire allows for ultrasmall device architecture such as a segmented memory cell in a single nanowire and a cross-bar memory cell at a nanowire junction. Furthermore, the nanoscale physical mechanisms of ReRAM are directly extracted by the confined space of the oxide nanowire. First, the memory performance of oxide nanowire ReRAM, including their cell sizes, is discussed, and later, the detailed mechanism, the challenging issues, and the application field of oxide nanowire ReRAM are discussed.
|Title of host publication||Magnetic Nano- and Microwires|
|Subtitle of host publication||Design, Synthesis, Properties and Applications|
|Number of pages||36|
|Publication status||Published - May 28 2015|
All Science Journal Classification (ASJC) codes