Oxygen-annealing effects on superconducting properties of ErBa 2Cu3Oy, thin films fabricated by pulsed laser deposition method

Shigeru Horii, Masashi Mukaida, Yusuke Ichino, Kaname Matsumoto, Tohru Ohazama, Ataru Ichinose, Yutaka Yoshida, Atsushi Saito, Jun Ichi Shimoyama, Kohji Kishio

Research output: Contribution to journalArticle

Abstract

We report crystallographic and electrical properties of ErBa 2Cu3Oy/SrTiO3 (Er123/STO) films which were fabricated by the pulsed-laser-deposition (PLD) method in the temperature range of 720-780°C, and dramatic enhancement of critical current density (/c) by an oxygen post-annealing process. The PLD Er123/STO films were found to be crystallographically excellent in the deposition temperature region below 770°C from the intensity of diffraction peaks of 00l, the pole-figure of a reciprocal (102) plane and microstructures of the surface and the cross-section. Interestingly, in this temperature region, Jc values were clearly increased to the order of 1010 Am-2 by oxygen post-annealing in comparison with those of the as-grown films (0.3∼0.6 × 1010 Am-2). Enhancement of Jc was accomplished in a wide annealing temperature range of 350-500°C, which is corresponding with an annealing temperature range where the critical temperature shows over 90 K on a polycrystalline sample. On the other hand, Irreversibility fields were almost independent of the annealing temperature. These results indicated that insufficient carrier-doped region was partly existed even in a non-equilibrium process such as the PLD method. Therefore, homogenization of oxygen contents in a whole part of the Er123 film is crucially important for enhancement of critical current properties, which strongly suggests that the oxygen annealing is effective for improvement of functionality of devices in PLD-REBa2Cu3O, (RE: rare earth elements) thin films.

Original languageEnglish
Pages (from-to)748-755
Number of pages8
JournalNippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals
Volume68
Issue number9
DOIs
Publication statusPublished - Sep 2004

Fingerprint

Pulsed laser deposition
pulsed laser deposition
Annealing
Oxygen
Thin films
annealing
oxygen
thin films
Temperature
temperature
augmentation
critical current
homogenizing
Critical currents
Rare earth elements
critical temperature
poles
rare earth elements
electrical properties
Poles

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Mechanics of Materials
  • Metals and Alloys
  • Materials Chemistry

Cite this

Oxygen-annealing effects on superconducting properties of ErBa 2Cu3Oy, thin films fabricated by pulsed laser deposition method. / Horii, Shigeru; Mukaida, Masashi; Ichino, Yusuke; Matsumoto, Kaname; Ohazama, Tohru; Ichinose, Ataru; Yoshida, Yutaka; Saito, Atsushi; Shimoyama, Jun Ichi; Kishio, Kohji.

In: Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals, Vol. 68, No. 9, 09.2004, p. 748-755.

Research output: Contribution to journalArticle

Horii, Shigeru ; Mukaida, Masashi ; Ichino, Yusuke ; Matsumoto, Kaname ; Ohazama, Tohru ; Ichinose, Ataru ; Yoshida, Yutaka ; Saito, Atsushi ; Shimoyama, Jun Ichi ; Kishio, Kohji. / Oxygen-annealing effects on superconducting properties of ErBa 2Cu3Oy, thin films fabricated by pulsed laser deposition method. In: Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals. 2004 ; Vol. 68, No. 9. pp. 748-755.
@article{18038de67c0448f5a0f20893dbbd41c3,
title = "Oxygen-annealing effects on superconducting properties of ErBa 2Cu3Oy, thin films fabricated by pulsed laser deposition method",
abstract = "We report crystallographic and electrical properties of ErBa 2Cu3Oy/SrTiO3 (Er123/STO) films which were fabricated by the pulsed-laser-deposition (PLD) method in the temperature range of 720-780°C, and dramatic enhancement of critical current density (/c) by an oxygen post-annealing process. The PLD Er123/STO films were found to be crystallographically excellent in the deposition temperature region below 770°C from the intensity of diffraction peaks of 00l, the pole-figure of a reciprocal (102) plane and microstructures of the surface and the cross-section. Interestingly, in this temperature region, Jc values were clearly increased to the order of 1010 Am-2 by oxygen post-annealing in comparison with those of the as-grown films (0.3∼0.6 × 1010 Am-2). Enhancement of Jc was accomplished in a wide annealing temperature range of 350-500°C, which is corresponding with an annealing temperature range where the critical temperature shows over 90 K on a polycrystalline sample. On the other hand, Irreversibility fields were almost independent of the annealing temperature. These results indicated that insufficient carrier-doped region was partly existed even in a non-equilibrium process such as the PLD method. Therefore, homogenization of oxygen contents in a whole part of the Er123 film is crucially important for enhancement of critical current properties, which strongly suggests that the oxygen annealing is effective for improvement of functionality of devices in PLD-REBa2Cu3O, (RE: rare earth elements) thin films.",
author = "Shigeru Horii and Masashi Mukaida and Yusuke Ichino and Kaname Matsumoto and Tohru Ohazama and Ataru Ichinose and Yutaka Yoshida and Atsushi Saito and Shimoyama, {Jun Ichi} and Kohji Kishio",
year = "2004",
month = "9",
doi = "10.2320/jinstmet.68.748",
language = "English",
volume = "68",
pages = "748--755",
journal = "Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals",
issn = "0021-4876",
publisher = "公益社団法人 日本金属学会",
number = "9",

}

TY - JOUR

T1 - Oxygen-annealing effects on superconducting properties of ErBa 2Cu3Oy, thin films fabricated by pulsed laser deposition method

AU - Horii, Shigeru

AU - Mukaida, Masashi

AU - Ichino, Yusuke

AU - Matsumoto, Kaname

AU - Ohazama, Tohru

AU - Ichinose, Ataru

AU - Yoshida, Yutaka

AU - Saito, Atsushi

AU - Shimoyama, Jun Ichi

AU - Kishio, Kohji

PY - 2004/9

Y1 - 2004/9

N2 - We report crystallographic and electrical properties of ErBa 2Cu3Oy/SrTiO3 (Er123/STO) films which were fabricated by the pulsed-laser-deposition (PLD) method in the temperature range of 720-780°C, and dramatic enhancement of critical current density (/c) by an oxygen post-annealing process. The PLD Er123/STO films were found to be crystallographically excellent in the deposition temperature region below 770°C from the intensity of diffraction peaks of 00l, the pole-figure of a reciprocal (102) plane and microstructures of the surface and the cross-section. Interestingly, in this temperature region, Jc values were clearly increased to the order of 1010 Am-2 by oxygen post-annealing in comparison with those of the as-grown films (0.3∼0.6 × 1010 Am-2). Enhancement of Jc was accomplished in a wide annealing temperature range of 350-500°C, which is corresponding with an annealing temperature range where the critical temperature shows over 90 K on a polycrystalline sample. On the other hand, Irreversibility fields were almost independent of the annealing temperature. These results indicated that insufficient carrier-doped region was partly existed even in a non-equilibrium process such as the PLD method. Therefore, homogenization of oxygen contents in a whole part of the Er123 film is crucially important for enhancement of critical current properties, which strongly suggests that the oxygen annealing is effective for improvement of functionality of devices in PLD-REBa2Cu3O, (RE: rare earth elements) thin films.

AB - We report crystallographic and electrical properties of ErBa 2Cu3Oy/SrTiO3 (Er123/STO) films which were fabricated by the pulsed-laser-deposition (PLD) method in the temperature range of 720-780°C, and dramatic enhancement of critical current density (/c) by an oxygen post-annealing process. The PLD Er123/STO films were found to be crystallographically excellent in the deposition temperature region below 770°C from the intensity of diffraction peaks of 00l, the pole-figure of a reciprocal (102) plane and microstructures of the surface and the cross-section. Interestingly, in this temperature region, Jc values were clearly increased to the order of 1010 Am-2 by oxygen post-annealing in comparison with those of the as-grown films (0.3∼0.6 × 1010 Am-2). Enhancement of Jc was accomplished in a wide annealing temperature range of 350-500°C, which is corresponding with an annealing temperature range where the critical temperature shows over 90 K on a polycrystalline sample. On the other hand, Irreversibility fields were almost independent of the annealing temperature. These results indicated that insufficient carrier-doped region was partly existed even in a non-equilibrium process such as the PLD method. Therefore, homogenization of oxygen contents in a whole part of the Er123 film is crucially important for enhancement of critical current properties, which strongly suggests that the oxygen annealing is effective for improvement of functionality of devices in PLD-REBa2Cu3O, (RE: rare earth elements) thin films.

UR - http://www.scopus.com/inward/record.url?scp=9144271266&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=9144271266&partnerID=8YFLogxK

U2 - 10.2320/jinstmet.68.748

DO - 10.2320/jinstmet.68.748

M3 - Article

AN - SCOPUS:9144271266

VL - 68

SP - 748

EP - 755

JO - Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals

JF - Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals

SN - 0021-4876

IS - 9

ER -