Abstract
Oxygen concentration in the top silicon layer of silicon-on-insulator materials formed by low-dose implantation of oxygen has been measured by means of secondary ion mass spectroscopy. A value of less than 1 × 1017 atoms/cm3 has been obtained. We propose that the oxygen concentration in the top silicon layer is controlled by oxygen out-diffusion during the wafer cooling process.
Original language | English |
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Pages (from-to) | L359-L361 |
Journal | Japanese Journal of Applied Physics, Part 2: Letters |
Volume | 35 |
Issue number | 3 B |
DOIs | |
Publication status | Published - Mar 15 1996 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)