Oxygen concentration in the top silicon layer of silicon-on-insulator materials formed by low-dose implantation of oxygen

Mina Saito, Jaroslaw Jablonski, Tatsuhiko Katayama, Yoshiji Miyamura, Kazuyoshi Ikegaya, Masato Imai

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

Oxygen concentration in the top silicon layer of silicon-on-insulator materials formed by low-dose implantation of oxygen has been measured by means of secondary ion mass spectroscopy. A value of less than 1 × 1017 atoms/cm3 has been obtained. We propose that the oxygen concentration in the top silicon layer is controlled by oxygen out-diffusion during the wafer cooling process.

Original languageEnglish
Pages (from-to)L359-L361
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume35
Issue number3 B
DOIs
Publication statusPublished - Mar 15 1996
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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