Oxygen concentration in the top silicon layer of silicon-on-insulator materials formed by low-dose implantation of oxygen

Mina Saito; Jaroslaw Jablonski; Tatsuhiko Katayama; Yoshiji Miyamura; Kazuyoshi Ikegaya; Masato Imai

doi:10.1143/jjap.35.l359

Oxygen concentration in the top silicon layer of silicon-on-insulator materials formed by low-dose implantation of oxygen

Mina Saito, Jaroslaw Jablonski, Tatsuhiko Katayama, Yoshiji Miyamura, Kazuyoshi Ikegaya, Masato Imai

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Oxygen concentration in the top silicon layer of silicon-on-insulator materials formed by low-dose implantation of oxygen has been measured by means of secondary ion mass spectroscopy. A value of less than 1 × 10¹⁷ atoms/cm³ has been obtained. We propose that the oxygen concentration in the top silicon layer is controlled by oxygen out-diffusion during the wafer cooling process.

Original language	English
Pages (from-to)	L359-L361
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	35
Issue number	3 B
DOIs	https://doi.org/10.1143/jjap.35.l359
Publication status	Published - Mar 15 1996
Externally published	Yes

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy (miscellaneous)
Physics and Astronomy(all)

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10.1143/jjap.35.l359

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Oxygen concentration in the top silicon layer of silicon-on-insulator materials formed by low-dose implantation of oxygen. / Saito, Mina; Jablonski, Jaroslaw; Katayama, Tatsuhiko; Miyamura, Yoshiji; Ikegaya, Kazuyoshi; Imai, Masato.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 35, No. 3 B, 15.03.1996, p. L359-L361.

Research output: Contribution to journal › Article › peer-review

@article{69a0f7052d764486864449c857b085ae,

title = "Oxygen concentration in the top silicon layer of silicon-on-insulator materials formed by low-dose implantation of oxygen",

abstract = "Oxygen concentration in the top silicon layer of silicon-on-insulator materials formed by low-dose implantation of oxygen has been measured by means of secondary ion mass spectroscopy. A value of less than 1 × 1017 atoms/cm3 has been obtained. We propose that the oxygen concentration in the top silicon layer is controlled by oxygen out-diffusion during the wafer cooling process.",

author = "Mina Saito and Jaroslaw Jablonski and Tatsuhiko Katayama and Yoshiji Miyamura and Kazuyoshi Ikegaya and Masato Imai",

year = "1996",

month = mar,

day = "15",

doi = "10.1143/jjap.35.l359",

language = "English",

volume = "35",

pages = "L359--L361",

journal = "Japanese Journal of Applied Physics, Part 2: Letters",

issn = "0021-4922",

publisher = "IOP Publishing Ltd.",

number = "3 B",

}

TY - JOUR

T1 - Oxygen concentration in the top silicon layer of silicon-on-insulator materials formed by low-dose implantation of oxygen

AU - Saito, Mina

AU - Jablonski, Jaroslaw

AU - Katayama, Tatsuhiko

AU - Miyamura, Yoshiji

AU - Ikegaya, Kazuyoshi

AU - Imai, Masato

PY - 1996/3/15

Y1 - 1996/3/15

N2 - Oxygen concentration in the top silicon layer of silicon-on-insulator materials formed by low-dose implantation of oxygen has been measured by means of secondary ion mass spectroscopy. A value of less than 1 × 1017 atoms/cm3 has been obtained. We propose that the oxygen concentration in the top silicon layer is controlled by oxygen out-diffusion during the wafer cooling process.

AB - Oxygen concentration in the top silicon layer of silicon-on-insulator materials formed by low-dose implantation of oxygen has been measured by means of secondary ion mass spectroscopy. A value of less than 1 × 1017 atoms/cm3 has been obtained. We propose that the oxygen concentration in the top silicon layer is controlled by oxygen out-diffusion during the wafer cooling process.

UR - http://www.scopus.com/inward/record.url?scp=5544229758&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=5544229758&partnerID=8YFLogxK

U2 - 10.1143/jjap.35.l359

DO - 10.1143/jjap.35.l359

M3 - Article

AN - SCOPUS:5544229758

VL - 35

SP - L359-L361

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

SN - 0021-4922

IS - 3 B

ER -

Oxygen concentration in the top silicon layer of silicon-on-insulator materials formed by low-dose implantation of oxygen

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