Oxygen concentration in the top silicon layer of silicon-on-insulator materials formed by low-dose implantation of oxygen has been measured by means of secondary ion mass spectroscopy. A value of less than 1 × 1017 atoms/cm3 has been obtained. We propose that the oxygen concentration in the top silicon layer is controlled by oxygen out-diffusion during the wafer cooling process.
|Journal||Japanese Journal of Applied Physics, Part 2: Letters|
|Issue number||3 B|
|Publication status||Published - Mar 15 1996|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)