Oxygen diffusion phenomena and hydrogen incorporation in reducing BaTiO 3 ceramics doped with ho below solubility limit

Isao Sakaguchi; Ken Watanabe; Shunichi Hishita; Naoki Ohashi; Hajime Haneda

doi:10.1143/JJAP.51.101801

Oxygen diffusion phenomena and hydrogen incorporation in reducing BaTiO ₃ ceramics doped with ho below solubility limit

Isao Sakaguchi, Ken Watanabe, Shunichi Hishita, Naoki Ohashi, Hajime Haneda

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Oxygen diffusion phenomena in BaTiO ₃ ceramics doped with Ho of 5.2×10 18/cm3 were studied in order to reveal the effect of reduction thermal annealing. The samples were reduced at 850°C in a 3% H2-Ar atmosphere before the oxygen diffusion experiments. The oxygen diffusion was carried out in the temperature range of 700-800°C. The measurement of diffusion profiles and ion images revealed the oxygen defect distribution caused by the annealing. The results show that the grain boundary acts as a layer blocking oxygen diffusion when the diffusion temperature is below the reduction temperature of 850°C.

Original language	English
Article number	101801
Journal	Japanese journal of applied physics
Volume	51
Issue number	10
DOIs	https://doi.org/10.1143/JJAP.51.101801
Publication status	Published - Oct 2012
Externally published	Yes

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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abstract = "Oxygen diffusion phenomena in BaTiO 3 ceramics doped with Ho of 5.2×10 18/cm3 were studied in order to reveal the effect of reduction thermal annealing. The samples were reduced at 850°C in a 3% H2-Ar atmosphere before the oxygen diffusion experiments. The oxygen diffusion was carried out in the temperature range of 700-800°C. The measurement of diffusion profiles and ion images revealed the oxygen defect distribution caused by the annealing. The results show that the grain boundary acts as a layer blocking oxygen diffusion when the diffusion temperature is below the reduction temperature of 850°C.",

author = "Isao Sakaguchi and Ken Watanabe and Shunichi Hishita and Naoki Ohashi and Hajime Haneda",

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AU - Sakaguchi, Isao

AU - Watanabe, Ken

AU - Hishita, Shunichi

AU - Ohashi, Naoki

AU - Haneda, Hajime

PY - 2012/10

Y1 - 2012/10

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AB - Oxygen diffusion phenomena in BaTiO 3 ceramics doped with Ho of 5.2×10 18/cm3 were studied in order to reveal the effect of reduction thermal annealing. The samples were reduced at 850°C in a 3% H2-Ar atmosphere before the oxygen diffusion experiments. The oxygen diffusion was carried out in the temperature range of 700-800°C. The measurement of diffusion profiles and ion images revealed the oxygen defect distribution caused by the annealing. The results show that the grain boundary acts as a layer blocking oxygen diffusion when the diffusion temperature is below the reduction temperature of 850°C.

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Oxygen diffusion phenomena and hydrogen incorporation in reducing BaTiO ₃ ceramics doped with ho below solubility limit

Abstract

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