Oxygen diffusion phenomena and hydrogen incorporation in reducing BaTiO 3 ceramics doped with ho below solubility limit

Isao Sakaguchi, Ken Watanabe, Shunichi Hishita, Naoki Ohashi, Hajime Haneda

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Oxygen diffusion phenomena in BaTiO 3 ceramics doped with Ho of 5.2×10 18/cm3 were studied in order to reveal the effect of reduction thermal annealing. The samples were reduced at 850°C in a 3% H2-Ar atmosphere before the oxygen diffusion experiments. The oxygen diffusion was carried out in the temperature range of 700-800°C. The measurement of diffusion profiles and ion images revealed the oxygen defect distribution caused by the annealing. The results show that the grain boundary acts as a layer blocking oxygen diffusion when the diffusion temperature is below the reduction temperature of 850°C.

Original languageEnglish
Article number101801
JournalJapanese Journal of Applied Physics
Volume51
Issue number10
DOIs
Publication statusPublished - Oct 1 2012
Externally publishedYes

Fingerprint

solubility
Solubility
ceramics
Hydrogen
Oxygen
oxygen
hydrogen
Annealing
annealing
Temperature
temperature
Grain boundaries
grain boundaries
atmospheres
Defects
defects
Ions
profiles
ions
Experiments

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Oxygen diffusion phenomena and hydrogen incorporation in reducing BaTiO 3 ceramics doped with ho below solubility limit. / Sakaguchi, Isao; Watanabe, Ken; Hishita, Shunichi; Ohashi, Naoki; Haneda, Hajime.

In: Japanese Journal of Applied Physics, Vol. 51, No. 10, 101801, 01.10.2012.

Research output: Contribution to journalArticle

@article{8d71e340b80546c291828218a0455e58,
title = "Oxygen diffusion phenomena and hydrogen incorporation in reducing BaTiO 3 ceramics doped with ho below solubility limit",
abstract = "Oxygen diffusion phenomena in BaTiO 3 ceramics doped with Ho of 5.2×10 18/cm3 were studied in order to reveal the effect of reduction thermal annealing. The samples were reduced at 850°C in a 3{\%} H2-Ar atmosphere before the oxygen diffusion experiments. The oxygen diffusion was carried out in the temperature range of 700-800°C. The measurement of diffusion profiles and ion images revealed the oxygen defect distribution caused by the annealing. The results show that the grain boundary acts as a layer blocking oxygen diffusion when the diffusion temperature is below the reduction temperature of 850°C.",
author = "Isao Sakaguchi and Ken Watanabe and Shunichi Hishita and Naoki Ohashi and Hajime Haneda",
year = "2012",
month = "10",
day = "1",
doi = "10.1143/JJAP.51.101801",
language = "English",
volume = "51",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Institute of Physics",
number = "10",

}

TY - JOUR

T1 - Oxygen diffusion phenomena and hydrogen incorporation in reducing BaTiO 3 ceramics doped with ho below solubility limit

AU - Sakaguchi, Isao

AU - Watanabe, Ken

AU - Hishita, Shunichi

AU - Ohashi, Naoki

AU - Haneda, Hajime

PY - 2012/10/1

Y1 - 2012/10/1

N2 - Oxygen diffusion phenomena in BaTiO 3 ceramics doped with Ho of 5.2×10 18/cm3 were studied in order to reveal the effect of reduction thermal annealing. The samples were reduced at 850°C in a 3% H2-Ar atmosphere before the oxygen diffusion experiments. The oxygen diffusion was carried out in the temperature range of 700-800°C. The measurement of diffusion profiles and ion images revealed the oxygen defect distribution caused by the annealing. The results show that the grain boundary acts as a layer blocking oxygen diffusion when the diffusion temperature is below the reduction temperature of 850°C.

AB - Oxygen diffusion phenomena in BaTiO 3 ceramics doped with Ho of 5.2×10 18/cm3 were studied in order to reveal the effect of reduction thermal annealing. The samples were reduced at 850°C in a 3% H2-Ar atmosphere before the oxygen diffusion experiments. The oxygen diffusion was carried out in the temperature range of 700-800°C. The measurement of diffusion profiles and ion images revealed the oxygen defect distribution caused by the annealing. The results show that the grain boundary acts as a layer blocking oxygen diffusion when the diffusion temperature is below the reduction temperature of 850°C.

UR - http://www.scopus.com/inward/record.url?scp=84867835033&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84867835033&partnerID=8YFLogxK

U2 - 10.1143/JJAP.51.101801

DO - 10.1143/JJAP.51.101801

M3 - Article

VL - 51

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 10

M1 - 101801

ER -