Oxygen distribution at a solid-liquid interface of silicon under transverse magnetic fields

K. Kakimoto, H. Ozoe

Research output: Contribution to journalArticle

41 Citations (Scopus)

Abstract

This paper aims to report the effect of transverse magnetic fields on melt convection and oxygen transfers in silicon melt during single-crystal growth. Three-dimensional and time-dependent calculation was carried out to clarify distributions of velocity, temperature and oxygen in the melt. Asymmetric temperature and oxygen distributions were obtained from the calculation, which were due to unidirectional magnetic fields. Oxygen distribution in the melt was also discussed to clarify how surface-tension-driven flow affect the oxygen distribution at an interface between crystals and melt.

Original languageEnglish
Pages (from-to)429-437
Number of pages9
JournalJournal of Crystal Growth
Volume212
Issue number3
DOIs
Publication statusPublished - May 2000

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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