Oxygen distribution at a solid-liquid interface of silicon under transverse magnetic fields

Research output: Contribution to journalArticle

41 Citations (Scopus)

Abstract

This paper aims to report the effect of transverse magnetic fields on melt convection and oxygen transfers in silicon melt during single-crystal growth. Three-dimensional and time-dependent calculation was carried out to clarify distributions of velocity, temperature and oxygen in the melt. Asymmetric temperature and oxygen distributions were obtained from the calculation, which were due to unidirectional magnetic fields. Oxygen distribution in the melt was also discussed to clarify how surface-tension-driven flow affect the oxygen distribution at an interface between crystals and melt.

Original languageEnglish
Pages (from-to)429-437
Number of pages9
JournalJournal of Crystal Growth
Volume212
Issue number3
DOIs
Publication statusPublished - Jan 1 2000

Fingerprint

Silicon
liquid-solid interfaces
Magnetic fields
Oxygen
Liquids
silicon
oxygen
magnetic fields
Crystallization
Crystal growth
Surface tension
crystal growth
interfacial tension
temperature distribution
convection
Single crystals
Temperature
Crystals
single crystals
crystals

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Oxygen distribution at a solid-liquid interface of silicon under transverse magnetic fields. / Kakimoto, Koichi; Ozoe, H.

In: Journal of Crystal Growth, Vol. 212, No. 3, 01.01.2000, p. 429-437.

Research output: Contribution to journalArticle

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