Oxygen distribution in silicon melt under inhomogeneous transverse-magnetic fields

Research output: Contribution to journalConference article

31 Citations (Scopus)

Abstract

This paper aims to report an effect on inhomogeneous transverse-magnetic fields to melt convection and oxygen distribution in silicon melt and at a solid-liquid interface during single crystal growth. The inhomogeneous transverse-magnetic fields were obtained by the calculation based on Biot-Savart equation with an assumption of finite-diameter solenoids. We studied how Lorenz force, which was formed by the inhomogeneous magnetic fields, modified convection of the melt and oxygen transfer as a function of relative position between the solenoids and the melt. We showed the possibility that oxygen concentration in the melt and near the solid-liquid interface can be controlled by relative position between the melt and the inhomogeneous transverse-magnetic fields. We discuss the effects of Lorenz force and electric potential distributions on the melt and oxygen transfer on the basis of calculated results obtained by three-dimensional and time-dependent calculation.

Original languageEnglish
Pages (from-to)100-107
Number of pages8
JournalJournal of Crystal Growth
Volume230
Issue number1-2
DOIs
Publication statusPublished - Aug 1 2001

Fingerprint

Silicon
Magnetic fields
Oxygen
Solenoids
silicon
oxygen
liquid-solid interfaces
solenoids
magnetic fields
convection
Liquids
Crystallization
Crystal growth
crystal growth
Single crystals
single crystals
Electric potential
electric potential
Convection

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Oxygen distribution in silicon melt under inhomogeneous transverse-magnetic fields. / Kakimoto, K.

In: Journal of Crystal Growth, Vol. 230, No. 1-2, 01.08.2001, p. 100-107.

Research output: Contribution to journalConference article

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