Oxygen Incorporation Kinetics in Vicinal m(10−10) Gallium Nitride Growth by Metal-Organic Vapor Phase Epitaxy

Daichi Yosho, Fumiya Shintaku, Yuya Inatomi, Yoshihiro Kangawa, Jun Ichi Iwata, Atsushi Oshiyama, Kenji Shiraishi, Atsushi Tanaka, Hiroshi Amano

Research output: Contribution to journalArticle

Abstract

The oxygen incorporation kinetics of vicinal m(10−10) gallium nitride (GaN) growth during metal-organic vapor phase epitaxy is clarified using a diffusion equation-based approach that incorporates diffusion potentials obtained by large-scale density functional theory (DFT) calculations. A diffusion model based on the Burton, Cabrera and Frank (BCF) theory is proposed, and then, the oxygen concentration in the epitaxial films is calculated quantitatively. The calculation results agree with the experimental tendency that the oxygen concentration in the −c 5° off m-GaN epilayers is lower than that in the +c 5° off m-GaN epilayers. Then, the off-angle dependence of oxygen incorporation in vicinal m-GaN growth is predicted.

Original languageEnglish
Article number2000142
JournalPhysica Status Solidi - Rapid Research Letters
Volume14
Issue number6
DOIs
Publication statusPublished - Jun 1 2020

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

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