TY - JOUR
T1 - Oxygen Incorporation Kinetics in Vicinal m(10−10) Gallium Nitride Growth by Metal-Organic Vapor Phase Epitaxy
AU - Yosho, Daichi
AU - Shintaku, Fumiya
AU - Inatomi, Yuya
AU - Kangawa, Yoshihiro
AU - Iwata, Jun Ichi
AU - Oshiyama, Atsushi
AU - Shiraishi, Kenji
AU - Tanaka, Atsushi
AU - Amano, Hiroshi
N1 - Funding Information:
This work was partially supported by the MEXT “Program for Research and Development of Next‐Generation Semiconductors to Realize an Energy‐Saving Society (Grant Number JPJ005357),” MEXT “Social and Scientific Priority Issue: Creation of New Functional Devices and High‐Performance Materials to Support Next‐Generation Industries by Post‐K Computer,” JSPS KAKENHI (Grant Number JP16H06418), JST SICORP (Grant Number 16813791B), and the European Union's Horizon 2020 Research and Innovation Program (Grant Number 720527: InRel‐NPower project). The computations were carried out using the computer resources offered under the category of general projects by the Research Institute for Information Technology, Kyushu University.
Funding Information:
This work was partially supported by the MEXT ?Program for Research and Development of Next-Generation Semiconductors to Realize an Energy-Saving Society (Grant Number JPJ005357),? MEXT ?Social and Scientific Priority Issue: Creation of New Functional Devices and High-Performance Materials to Support Next-Generation Industries by Post-K Computer,? JSPS KAKENHI (Grant Number JP16H06418), JST SICORP (Grant Number 16813791B), and the European Union's Horizon 2020 Research and Innovation Program (Grant Number 720527: InRel-NPower project). The computations were carried out using the computer resources offered under the category of general projects by the Research Institute for Information Technology, Kyushu University.
Publisher Copyright:
© 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
PY - 2020/6/1
Y1 - 2020/6/1
N2 - The oxygen incorporation kinetics of vicinal m(10−10) gallium nitride (GaN) growth during metal-organic vapor phase epitaxy is clarified using a diffusion equation-based approach that incorporates diffusion potentials obtained by large-scale density functional theory (DFT) calculations. A diffusion model based on the Burton, Cabrera and Frank (BCF) theory is proposed, and then, the oxygen concentration in the epitaxial films is calculated quantitatively. The calculation results agree with the experimental tendency that the oxygen concentration in the −c 5° off m-GaN epilayers is lower than that in the +c 5° off m-GaN epilayers. Then, the off-angle dependence of oxygen incorporation in vicinal m-GaN growth is predicted.
AB - The oxygen incorporation kinetics of vicinal m(10−10) gallium nitride (GaN) growth during metal-organic vapor phase epitaxy is clarified using a diffusion equation-based approach that incorporates diffusion potentials obtained by large-scale density functional theory (DFT) calculations. A diffusion model based on the Burton, Cabrera and Frank (BCF) theory is proposed, and then, the oxygen concentration in the epitaxial films is calculated quantitatively. The calculation results agree with the experimental tendency that the oxygen concentration in the −c 5° off m-GaN epilayers is lower than that in the +c 5° off m-GaN epilayers. Then, the off-angle dependence of oxygen incorporation in vicinal m-GaN growth is predicted.
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U2 - 10.1002/pssr.202000142
DO - 10.1002/pssr.202000142
M3 - Article
AN - SCOPUS:85083645648
SN - 1862-6254
VL - 14
JO - Physica Status Solidi - Rapid Research Letters
JF - Physica Status Solidi - Rapid Research Letters
IS - 6
M1 - 2000142
ER -