Oxygen-Induced Reversible Sn-Dopant Deactivation between Indium Tin Oxide and Single-Crystalline Oxide Nanowire Leading to Interfacial Switching

Hao Zeng, Tsunaki Takahashi, Takehito Seki, Masaki Kanai, Guozhu Zhang, Takuro Hosomi, Kazuki Nagashima, Naoya Shibata, Takeshi Yanagida

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

An impurity doping in semiconductors is an important irreversible process of manipulating the electrical properties of advanced electron devices. Here, we report an unusual reversible dopant activation/deactivation phenomenon, which emerges at an interface between indium tin oxide (ITO) and single-crystalline oxide channel. We found that the interface electrical resistance between ITO electrodes and single-crystalline oxide nanowire channel can be repeatedly switched between a metallic state and a near-insulative state by applying thermal treatments in air or vacuum. Interestingly, this electrical switching phenomenon disappears when the oxide nanowire changes from the single-crystalline structure to the lithography-defined polycrystalline structure. Atmosphere-controlled annealing experiments reveal that atmospheric oxygen induces repeatable change in the interfacial electrical resistance. Systematic investigations on metal cation species and channel crystallinity demonstrate that the observed electrical switching is related to an interface-specific reversible Sn-dopant activation/deactivation of ITO electrode in contact with a single-crystalline oxide channel.

Original languageEnglish
Pages (from-to)52929-52936
Number of pages8
JournalACS Applied Materials and Interfaces
Volume12
Issue number47
DOIs
Publication statusPublished - Nov 25 2020

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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