Oxygen-isotope-doped silicon crystals grown by a floating zone method

Koichi Kakimoto, Katsuto Tanahashi, Hiroshi Yamada-Kaneta, Tohru Nagasawa

Research output: Contribution to journalArticle

Abstract

We have grown silicon single crystals doped with isotope oxygen of 18O by using a floating zone method with two ellipsoid mirrors. Two lamps through a quartz tube heated the crystal for melting during crystal growth. The isotope oxygen of 18O was doped from the gas phase with argon gas during crystal growth. The isotope of 18O was detected by using Fourier transformation of infrared (FTIR) spectroscopy at room temperature. We succeed in the doping of the isotope of 18O from the gas phase through a liquid-gas interface.

Original languageEnglish
Pages (from-to)310-312
Number of pages3
JournalJournal of Crystal Growth
Volume304
Issue number2
DOIs
Publication statusPublished - Jun 15 2007

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Oxygen Isotopes
oxygen isotopes
Silicon
floating
Isotopes
crystal growth
isotopes
Gases
vapor phases
Crystals
Oxygen
Fourier transformation
silicon
ellipsoids
Crystallization
gases
Crystal growth
luminaires
crystals
quartz

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Oxygen-isotope-doped silicon crystals grown by a floating zone method. / Kakimoto, Koichi; Tanahashi, Katsuto; Yamada-Kaneta, Hiroshi; Nagasawa, Tohru.

In: Journal of Crystal Growth, Vol. 304, No. 2, 15.06.2007, p. 310-312.

Research output: Contribution to journalArticle

Kakimoto, Koichi ; Tanahashi, Katsuto ; Yamada-Kaneta, Hiroshi ; Nagasawa, Tohru. / Oxygen-isotope-doped silicon crystals grown by a floating zone method. In: Journal of Crystal Growth. 2007 ; Vol. 304, No. 2. pp. 310-312.
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