Oxygen post-annealing effects on critical current properties of PLD-ErBa2Cu3Oy films grown at several substrate temperatures

S. Horii, M. Mukaida, Y. Ichino, K. Matsumoto, T. Ohazama, A. Ichinose, Y. Yoshida, J. Shimoyama, K. Kishio

Research output: Contribution to journalConference article

6 Citations (Scopus)

Abstract

We report the effects of oxygen post-annealing on critical current properties and normal state resistivities in ErBa2Cu 3Oy/SrTiO3(Er123/STO) thin films fabricated in the substrate temperature range from 720 °C to 780 °C by pulsed laser deposition (PLD). Interestingly, for films fabricated below 760 °C, the critical current density (Jc) increased by oxygen post-annealing process from 0.3-0.6 × 106 A cm-2 to the order of 106 A cm-2 for the as-deposited films despite critical temperatures (Tc) of ∼90 K for both annealed and as-deposited films. In the 780 °C-deposited film, Jc was not obviously enhanced. X-ray diffraction and measurement of normal state resistivities revealed that the PLD-Er123/STO films showed high-quality crystallographic and electrical properties in films deposited below 760 °C. In high temperature resistivity measurements, the resistivity reduced with annealing time and showed a systematic change with changing oxygen partial pressure. These results strongly suggest that oxygen post-annealing is indispensable for improving Jc in 123 films fabricated through a non-equilibrium process such as the PLD method even though the as-deposited films show a Tc value of ∼90 K.

Original languageEnglish
Pages (from-to)1015-1020
Number of pages6
JournalPhysica C: Superconductivity and its applications
Volume426-431
Issue numberII
DOIs
Publication statusPublished - Oct 7 2005
Externally publishedYes
EventProceedings of the 17th Internatioanl Symposium on Superconductivity (ISS 2004) Advances in Superconductivity -
Duration: Nov 23 2004Nov 25 2004

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Critical currents
Pulsed laser deposition
pulsed laser deposition
critical current
Annealing
Oxygen
annealing
oxygen
Substrates
Temperature
electrical resistivity
temperature
Partial pressure
partial pressure
critical temperature
Electric properties
electrical properties
current density
X ray diffraction
Thin films

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

Cite this

Oxygen post-annealing effects on critical current properties of PLD-ErBa2Cu3Oy films grown at several substrate temperatures. / Horii, S.; Mukaida, M.; Ichino, Y.; Matsumoto, K.; Ohazama, T.; Ichinose, A.; Yoshida, Y.; Shimoyama, J.; Kishio, K.

In: Physica C: Superconductivity and its applications, Vol. 426-431, No. II, 07.10.2005, p. 1015-1020.

Research output: Contribution to journalConference article

Horii, S. ; Mukaida, M. ; Ichino, Y. ; Matsumoto, K. ; Ohazama, T. ; Ichinose, A. ; Yoshida, Y. ; Shimoyama, J. ; Kishio, K. / Oxygen post-annealing effects on critical current properties of PLD-ErBa2Cu3Oy films grown at several substrate temperatures. In: Physica C: Superconductivity and its applications. 2005 ; Vol. 426-431, No. II. pp. 1015-1020.
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