Oxygen tracer diffusion in a-axis oriented ZnO thin films grown on (011 2) sapphire by pulsed laser deposition

Isao Sakaguchi, Ken Watanabe, Yutaka Adachi, Takeshi Ohgaki, Shunichi Hishita, Naoki Ohashi, Hajime Haneda

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The a-axis oriented ZnO thin films deposited on (011 2) sapphire substrates by pulsed laser deposition were studied to investigate the effects of pre-annealing on oxygen diffusion. The effect was as follows: the oxygen diffusion coefficient decreased, and the oxygen concentration in the tailing regions of the profiles reduced. Ion images of an oxygen tracer revealed the high-diffusivity paths for oxygen tracer diffusion. The temperature dependence of oxygen tracer diffusion coefficients (Db) in as-deposited and pre-annealed thin films were determined to be Db [cm2/s] = 9.2×102 exp (-405 [kJ/mol] / RT) and Db [cm 2/s] = 1.8×103 exp (- 418 [kJ/mol] / RT), respectively. On basis of these results, the crystal orientation on D b and the mechanism for oxygen diffusion were discussed.

Original languageEnglish
Title of host publicationElectroceramics in Japan XV
Pages266-270
Number of pages5
DOIs
Publication statusPublished - Sep 11 2013
Event31st Electronics Division Meeting of the Ceramic Society of Japan - Tokyo, Japan
Duration: Oct 28 2011Oct 29 2011

Publication series

NameKey Engineering Materials
Volume566
ISSN (Print)1013-9826

Other

Other31st Electronics Division Meeting of the Ceramic Society of Japan
CountryJapan
CityTokyo
Period10/28/1110/29/11

Fingerprint

Aluminum Oxide
Pulsed laser deposition
Sapphire
Oxygen
Thin films
Tailings
Crystal orientation
Annealing
Ions
Substrates

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Sakaguchi, I., Watanabe, K., Adachi, Y., Ohgaki, T., Hishita, S., Ohashi, N., & Haneda, H. (2013). Oxygen tracer diffusion in a-axis oriented ZnO thin films grown on (011 2) sapphire by pulsed laser deposition. In Electroceramics in Japan XV (pp. 266-270). (Key Engineering Materials; Vol. 566). https://doi.org/10.4028/www.scientific.net/KEM.566.266

Oxygen tracer diffusion in a-axis oriented ZnO thin films grown on (011 2) sapphire by pulsed laser deposition. / Sakaguchi, Isao; Watanabe, Ken; Adachi, Yutaka; Ohgaki, Takeshi; Hishita, Shunichi; Ohashi, Naoki; Haneda, Hajime.

Electroceramics in Japan XV. 2013. p. 266-270 (Key Engineering Materials; Vol. 566).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sakaguchi, I, Watanabe, K, Adachi, Y, Ohgaki, T, Hishita, S, Ohashi, N & Haneda, H 2013, Oxygen tracer diffusion in a-axis oriented ZnO thin films grown on (011 2) sapphire by pulsed laser deposition. in Electroceramics in Japan XV. Key Engineering Materials, vol. 566, pp. 266-270, 31st Electronics Division Meeting of the Ceramic Society of Japan, Tokyo, Japan, 10/28/11. https://doi.org/10.4028/www.scientific.net/KEM.566.266
Sakaguchi I, Watanabe K, Adachi Y, Ohgaki T, Hishita S, Ohashi N et al. Oxygen tracer diffusion in a-axis oriented ZnO thin films grown on (011 2) sapphire by pulsed laser deposition. In Electroceramics in Japan XV. 2013. p. 266-270. (Key Engineering Materials). https://doi.org/10.4028/www.scientific.net/KEM.566.266
Sakaguchi, Isao ; Watanabe, Ken ; Adachi, Yutaka ; Ohgaki, Takeshi ; Hishita, Shunichi ; Ohashi, Naoki ; Haneda, Hajime. / Oxygen tracer diffusion in a-axis oriented ZnO thin films grown on (011 2) sapphire by pulsed laser deposition. Electroceramics in Japan XV. 2013. pp. 266-270 (Key Engineering Materials).
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