Oxynitridation of Si with nitrogen plasma for flash memory and its high frequency C-V characteristics

Akihiro Ikeda, M. Abd Elnaby, Tsuyoshi Fujimura, Reiji Hattori, Yukinori Kuroki

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

Si (100) substrates were oxynitrided with nitrogen plasma exposure, at different conditions, followed by thermal oxidation in dry O2 without using any harmful or global warming gas. Atomic concentration of N to Si was 7.5% for plasma discharge power of 0.5kW and exposure time of 1 min. While, it was 17.6% for plasma power of 2.0kW and 3min, as depicted from X-ray photoelectron spectroscopy (XPS) measurements. A progressive reduction of the oxidation rate with the increase of N concentration associated with the increase of N plasma power was observed. Uniformity of film thickness across 4 inch wafer was improved with nitrogen plasma exposure followed by rapid thermal oxidation (RTO) with discrepancy less than 2.6% compared with 13.2% for N 2O thermal oxidation process. High frequency C-V measurements investigated the advantage of using N plasma exposure to Si for device application. A distortion in the C-V curve was observed for samples without nitridation, which is not observed for nitrided samples. The distortion in C-V curves was found to be substantially reduced as a result of Si nitridation, under the condition of reduced plasma power.

Original languageEnglish
Title of host publicationAdvances in Physics, Electronics and Signal Processing Applications
PublisherWorld Scientific and Engineering Academy and Society
Pages178-182
Number of pages5
ISBN (Print)9608052173
Publication statusPublished - Dec 1 2000

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Nitrogen plasma
Flash memory
Plasmas
Oxidation
Nitridation
Global warming
Film thickness
X ray photoelectron spectroscopy
Substrates
Gases
Hot Temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Ikeda, A., Elnaby, M. A., Fujimura, T., Hattori, R., & Kuroki, Y. (2000). Oxynitridation of Si with nitrogen plasma for flash memory and its high frequency C-V characteristics. In Advances in Physics, Electronics and Signal Processing Applications (pp. 178-182). World Scientific and Engineering Academy and Society.

Oxynitridation of Si with nitrogen plasma for flash memory and its high frequency C-V characteristics. / Ikeda, Akihiro; Elnaby, M. Abd; Fujimura, Tsuyoshi; Hattori, Reiji; Kuroki, Yukinori.

Advances in Physics, Electronics and Signal Processing Applications. World Scientific and Engineering Academy and Society, 2000. p. 178-182.

Research output: Chapter in Book/Report/Conference proceedingChapter

Ikeda, A, Elnaby, MA, Fujimura, T, Hattori, R & Kuroki, Y 2000, Oxynitridation of Si with nitrogen plasma for flash memory and its high frequency C-V characteristics. in Advances in Physics, Electronics and Signal Processing Applications. World Scientific and Engineering Academy and Society, pp. 178-182.
Ikeda A, Elnaby MA, Fujimura T, Hattori R, Kuroki Y. Oxynitridation of Si with nitrogen plasma for flash memory and its high frequency C-V characteristics. In Advances in Physics, Electronics and Signal Processing Applications. World Scientific and Engineering Academy and Society. 2000. p. 178-182
Ikeda, Akihiro ; Elnaby, M. Abd ; Fujimura, Tsuyoshi ; Hattori, Reiji ; Kuroki, Yukinori. / Oxynitridation of Si with nitrogen plasma for flash memory and its high frequency C-V characteristics. Advances in Physics, Electronics and Signal Processing Applications. World Scientific and Engineering Academy and Society, 2000. pp. 178-182
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AB - Si (100) substrates were oxynitrided with nitrogen plasma exposure, at different conditions, followed by thermal oxidation in dry O2 without using any harmful or global warming gas. Atomic concentration of N to Si was 7.5% for plasma discharge power of 0.5kW and exposure time of 1 min. While, it was 17.6% for plasma power of 2.0kW and 3min, as depicted from X-ray photoelectron spectroscopy (XPS) measurements. A progressive reduction of the oxidation rate with the increase of N concentration associated with the increase of N plasma power was observed. Uniformity of film thickness across 4 inch wafer was improved with nitrogen plasma exposure followed by rapid thermal oxidation (RTO) with discrepancy less than 2.6% compared with 13.2% for N 2O thermal oxidation process. High frequency C-V measurements investigated the advantage of using N plasma exposure to Si for device application. A distortion in the C-V curve was observed for samples without nitridation, which is not observed for nitrided samples. The distortion in C-V curves was found to be substantially reduced as a result of Si nitridation, under the condition of reduced plasma power.

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