p- and n-Type Ba8Ga16Ge30 studied by X-ray photoelectron spectroscopy

Jun Tang, Ryotaro Kumashiro, Jing Ju, Zhaofei Li, Marcos A. Avila, Kouichirou Suekuni, Toshiro Takabatake, Fangzhun Guo, Keisuke Kobayashi, Katsumi Tanigaki

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Abstract

The electronic properties of p- and n-type Ba8Ga16Ge30 (BGG) are studied using soft X-ray photoelectron spectroscopy at a high-energy facility. Three bands are resolved in the valence band region. The first band for n-type BGG is sensitive to temperature, while the second band is sensitive for p-type BGG. The change in the ratio of Ba to Ga, from which the carrier type is controlled in this system, modifies the positions of Ga residing at the larger (Ga-CGe)24 cage. This modification in the host network is responsible for the large differences observed in electronic properties of p- and n-BGGs in this clathrate family.

Original languageEnglish
Pages (from-to)60-64
Number of pages5
JournalChemical Physics Letters
Volume472
Issue number1-3
DOIs
Publication statusPublished - Apr 6 2009
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

Cite this

Tang, J., Kumashiro, R., Ju, J., Li, Z., Avila, M. A., Suekuni, K., ... Tanigaki, K. (2009). p- and n-Type Ba8Ga16Ge30 studied by X-ray photoelectron spectroscopy. Chemical Physics Letters, 472(1-3), 60-64. https://doi.org/10.1016/j.cplett.2009.02.061