p-and n-type charge transport in field-effect transistors of pristine poly(p-phenylenevinylene)

Hiroshi Kayashima, Takeshi Yasuda, Katsuhiko Fujita, Tetsuo Tsutsui

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Poly(p-phenylenevinylene) (PPV) thin films were prepared by using drop casting under high gravity condition in a centrifuge and PPV based field effect transistors (FET) were fabricated. PPV FETs with gold source-drain electrodes showed the p-channel characteristics. The field-effect hole mobility was improved to 8.8×10-4Cm2V-1s-1 by thermal treatment. PPV FET with calcium source-drain electrodes showed the n-channel characteristics and the field-effect electron mobility was 1.0×10-6cm2V-1s-1.

Original languageEnglish
Title of host publicationOrganic Electronics: Materials, Devices and Applications
Pages306-311
Number of pages6
Volume965
Publication statusPublished - 2006
Event2006 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 27 2006Dec 1 2006

Other

Other2006 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period11/27/0612/1/06

Fingerprint

Field effect transistors
Charge transfer
Electrodes
Hole mobility
Electron mobility
Centrifuges
Gold
Calcium
Gravitation
Casting
Heat treatment
Thin films
poly(4-phenylenevinylene)

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

Kayashima, H., Yasuda, T., Fujita, K., & Tsutsui, T. (2006). p-and n-type charge transport in field-effect transistors of pristine poly(p-phenylenevinylene). In Organic Electronics: Materials, Devices and Applications (Vol. 965, pp. 306-311)

p-and n-type charge transport in field-effect transistors of pristine poly(p-phenylenevinylene). / Kayashima, Hiroshi; Yasuda, Takeshi; Fujita, Katsuhiko; Tsutsui, Tetsuo.

Organic Electronics: Materials, Devices and Applications. Vol. 965 2006. p. 306-311.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kayashima, H, Yasuda, T, Fujita, K & Tsutsui, T 2006, p-and n-type charge transport in field-effect transistors of pristine poly(p-phenylenevinylene). in Organic Electronics: Materials, Devices and Applications. vol. 965, pp. 306-311, 2006 MRS Fall Meeting, Boston, MA, United States, 11/27/06.
Kayashima H, Yasuda T, Fujita K, Tsutsui T. p-and n-type charge transport in field-effect transistors of pristine poly(p-phenylenevinylene). In Organic Electronics: Materials, Devices and Applications. Vol. 965. 2006. p. 306-311
Kayashima, Hiroshi ; Yasuda, Takeshi ; Fujita, Katsuhiko ; Tsutsui, Tetsuo. / p-and n-type charge transport in field-effect transistors of pristine poly(p-phenylenevinylene). Organic Electronics: Materials, Devices and Applications. Vol. 965 2006. pp. 306-311
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