p-and n-type charge transport in field-effect transistors of pristine poly(p-phenylenevinylene)

Hiroshi Kayashima, Takeshi Yasuda, Katsuhiko Fujita, Tetsuo Tsutsui

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Poly(p-phenylenevinylene) (PPV) thin films were prepared by using drop casting under high gravity condition in a centrifuge and PPV based field effect transistors (FET) were fabricated. PPV FETs with gold source-drain electrodes showed the p-channel characteristics. The field-effect hole mobility was improved to 8.8×10-4Cm2V-1s-1 by thermal treatment. PPV FET with calcium source-drain electrodes showed the n-channel characteristics and the field-effect electron mobility was 1.0×10-6cm2V-1s-1.

Original languageEnglish
Title of host publicationOrganic Electronics
Subtitle of host publicationMaterials, Devices and Applications
Pages306-311
Number of pages6
Publication statusPublished - Dec 1 2006
Event2006 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 27 2006Dec 1 2006

Publication series

NameMaterials Research Society Symposium Proceedings
Volume965
ISSN (Print)0272-9172

Other

Other2006 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period11/27/0612/1/06

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Kayashima, H., Yasuda, T., Fujita, K., & Tsutsui, T. (2006). p-and n-type charge transport in field-effect transistors of pristine poly(p-phenylenevinylene). In Organic Electronics: Materials, Devices and Applications (pp. 306-311). (Materials Research Society Symposium Proceedings; Vol. 965).