P-i-n homojunction in organic light-emitting transistors

Satria Zulkarnaen Bisri, Taishi Takenobu, Kosuke Sawabe, Satoshi Tsuda, Yohei Yomogida, Takeshi Yamao, Shu Hotta, Chihaya Adachi, Yoshihiro Iwasa

Research output: Contribution to journalArticlepeer-review

72 Citations (Scopus)


A new method for investigating light-emitting property in organic devices is demonstrated. We apply the ambipolar light-emitting transistors (LETs) to directly observe the recombination zone, and find a strong link between the transistor performance and the zone size. This finding unambiguously indicates that the light emission comes from the electric-field-induced p-i-n homojunction in ambipolar LETs.

Original languageEnglish
Pages (from-to)2753-2758
Number of pages6
JournalAdvanced Materials
Issue number24
Publication statusPublished - Jun 24 2011

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering


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