P-i-n homojunction in organic light-emitting transistors

Satria Zulkarnaen Bisri; Taishi Takenobu; Kosuke Sawabe; Satoshi Tsuda; Yohei Yomogida; Takeshi Yamao; Shu Hotta; Chihaya Adachi; Yoshihiro Iwasa

doi:10.1002/adma.201004572

P-i-n homojunction in organic light-emitting transistors

Satria Zulkarnaen Bisri, Taishi Takenobu, Kosuke Sawabe, Satoshi Tsuda, Yohei Yomogida, Takeshi Yamao, Shu Hotta, Chihaya Adachi, Yoshihiro Iwasa

Applied Chemistry

Research output: Contribution to journal › Article › peer-review

72 Citations (Scopus)

Abstract

A new method for investigating light-emitting property in organic devices is demonstrated. We apply the ambipolar light-emitting transistors (LETs) to directly observe the recombination zone, and find a strong link between the transistor performance and the zone size. This finding unambiguously indicates that the light emission comes from the electric-field-induced p-i-n homojunction in ambipolar LETs.

Original language	English
Pages (from-to)	2753-2758
Number of pages	6
Journal	Advanced Materials
Volume	23
Issue number	24
DOIs	https://doi.org/10.1002/adma.201004572
Publication status	Published - Jun 24 2011

All Science Journal Classification (ASJC) codes

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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10.1002/adma.201004572

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author = "Bisri, {Satria Zulkarnaen} and Taishi Takenobu and Kosuke Sawabe and Satoshi Tsuda and Yohei Yomogida and Takeshi Yamao and Shu Hotta and Chihaya Adachi and Yoshihiro Iwasa",

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AU - Bisri, Satria Zulkarnaen

AU - Takenobu, Taishi

AU - Sawabe, Kosuke

AU - Tsuda, Satoshi

AU - Yomogida, Yohei

AU - Yamao, Takeshi

AU - Hotta, Shu

AU - Adachi, Chihaya

AU - Iwasa, Yoshihiro

PY - 2011/6/24

Y1 - 2011/6/24

N2 - A new method for investigating light-emitting property in organic devices is demonstrated. We apply the ambipolar light-emitting transistors (LETs) to directly observe the recombination zone, and find a strong link between the transistor performance and the zone size. This finding unambiguously indicates that the light emission comes from the electric-field-induced p-i-n homojunction in ambipolar LETs.

AB - A new method for investigating light-emitting property in organic devices is demonstrated. We apply the ambipolar light-emitting transistors (LETs) to directly observe the recombination zone, and find a strong link between the transistor performance and the zone size. This finding unambiguously indicates that the light emission comes from the electric-field-induced p-i-n homojunction in ambipolar LETs.

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EP - 2758

JO - Advanced Materials

JF - Advanced Materials

IS - 24

ER -

P-i-n homojunction in organic light-emitting transistors

Abstract

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