TY - JOUR
T1 - p-ZnO/n-ZnMgO Nanoparticle-Based Heterojunction UV Light-Emitting Diodes
AU - Shafiqul, Islam Mohammad
AU - Yoshida, Toshiyuki
AU - Fujita, Yasuhisa
N1 - Funding Information:
This work was partially supported by MEXT of Japan City Area Program of Shinji Lake and Nakaumi (2009–2012), JSPS KAKENHI Grant Number 25630150, The Canon Foundation, and S-Nanotech Co-Creation Co., Ltd.
Publisher Copyright:
© 2022 by the authors.
PY - 2022/12
Y1 - 2022/12
N2 - Heterojunction light-emitting diodes (LEDs), based on p-type ZnO and n-type ZnMgO nanoparticles, have been demonstrated. ZnMgO nanoparticles were prepared by the thermal diffusion of Mg onto ZnO nanoparticles. p-ZnO/GZO homostructure LEDs and p-ZnO/n-ZnMgO/GZO heterostructure LEDs have been fabricated using ZnO and ZnMgO nanoparticles. By comparing the characteristic results of these diodes, it can be seen that LEDs with the p-ZnO/n-ZnMgO/GZO structure showed better I–V characteristics with a lower current density leakage than those with the p-ZnO/GZO LED structure. Moreover, the emission intensity was improved by adding the ZnMgO NP layer to the LEDs. These results show that the ZnMgO NP layer acts as a hetero-barrier layer that suppresses the diffusion of holes into the n-type layer and confines holes to the p-type layer.
AB - Heterojunction light-emitting diodes (LEDs), based on p-type ZnO and n-type ZnMgO nanoparticles, have been demonstrated. ZnMgO nanoparticles were prepared by the thermal diffusion of Mg onto ZnO nanoparticles. p-ZnO/GZO homostructure LEDs and p-ZnO/n-ZnMgO/GZO heterostructure LEDs have been fabricated using ZnO and ZnMgO nanoparticles. By comparing the characteristic results of these diodes, it can be seen that LEDs with the p-ZnO/n-ZnMgO/GZO structure showed better I–V characteristics with a lower current density leakage than those with the p-ZnO/GZO LED structure. Moreover, the emission intensity was improved by adding the ZnMgO NP layer to the LEDs. These results show that the ZnMgO NP layer acts as a hetero-barrier layer that suppresses the diffusion of holes into the n-type layer and confines holes to the p-type layer.
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U2 - 10.3390/ma15238348
DO - 10.3390/ma15238348
M3 - Article
AN - SCOPUS:85143763022
VL - 15
JO - Materials
JF - Materials
SN - 1996-1944
IS - 23
M1 - 8348
ER -