TY - JOUR
T1 - Parasitic Magnetism in Magnetoelectric Antiferromagnet
AU - Ye, Shujun
AU - Shiokawa, Yohei
AU - Pati, Satya Prakash
AU - Sahashi, Masashi
N1 - Funding Information:
This work was partly funded by the ImPACT Program: Achieving Ultimate Green IT Devices with Long Usage Time without Charging (Program Manager: Masashi Sahashi), of the Council for Science, Technology and Innovation (Cabinet Office, Japanese Government).
Publisher Copyright:
© 2020 American Chemical Society.
PY - 2020/7/1
Y1 - 2020/7/1
N2 - Parasitic magnetism plays an important role in magnetoelectric spin switching of antiferromagnetic oxides, but its mechanism has not been clearly investigated. Unlike the widely obtained surface boundary magnetization in magnetoelectric Cr2O3 antiferromagnet, we previously reported that Al doping could produce volume-dependent parasitic magnetism (Mpara) in Cr2O3 with the remaining magnetoelectric effect and antiferromagnetic properties. In this work, we systematically investigated the magnetic properties of Mpara in Cr2O3 through its different exchange coupling characteristics with the ferromagnet at various conditions. The columnar grain boundaries cause an antiferromagnetic sublattice breaking to produce uncompensated spins and thus are considered to be responsible for Mpara in both undoped and Al-doped Cr2O3. Finally, a model was proposed for the formation mechanism of the parasitic magnetism in Cr2O3, which explains the reported magnetic characteristics of Cr2O3, and some current topics such as the domain formation and motion in Cr2O3 during magnetoelectric spin switching. This work contributes to a deep understanding of antiferromagnetic spintronics and provides a method to realize the low-energy operation of antiferromagnetic-based magnetic random access memory.
AB - Parasitic magnetism plays an important role in magnetoelectric spin switching of antiferromagnetic oxides, but its mechanism has not been clearly investigated. Unlike the widely obtained surface boundary magnetization in magnetoelectric Cr2O3 antiferromagnet, we previously reported that Al doping could produce volume-dependent parasitic magnetism (Mpara) in Cr2O3 with the remaining magnetoelectric effect and antiferromagnetic properties. In this work, we systematically investigated the magnetic properties of Mpara in Cr2O3 through its different exchange coupling characteristics with the ferromagnet at various conditions. The columnar grain boundaries cause an antiferromagnetic sublattice breaking to produce uncompensated spins and thus are considered to be responsible for Mpara in both undoped and Al-doped Cr2O3. Finally, a model was proposed for the formation mechanism of the parasitic magnetism in Cr2O3, which explains the reported magnetic characteristics of Cr2O3, and some current topics such as the domain formation and motion in Cr2O3 during magnetoelectric spin switching. This work contributes to a deep understanding of antiferromagnetic spintronics and provides a method to realize the low-energy operation of antiferromagnetic-based magnetic random access memory.
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U2 - 10.1021/acsami.0c06210
DO - 10.1021/acsami.0c06210
M3 - Article
C2 - 32490655
AN - SCOPUS:85087632140
VL - 12
SP - 29971
EP - 29978
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
SN - 1944-8244
IS - 26
ER -