We propose a way to fabricate polymer insulators with a high gate capacitance for low-operating voltage organic field-effect transistors (OFETs). The insulator consists of spin-coated cyanoethylpullulan as a high-k polymer and chemical vapor deposited parylene-C as a covering layer. Parylene-C layer is insoluble in a common organic solvent, so the dielectric system can be fabricated on a layer of solution processable organic semiconductors such as poly(9,9-dioctylfluorene-co-bithiophene) (F8T2). The OFET shows a field-effect mobility of 3.410-3cm2/Vs,a threshold voltage of-1V, and an on/off current ratio of 5.9102. We successfully observed low-voltage operation in OFETs with this dielectric system.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics