Al2O3 deposition and subsequent post-deposition annealing (Al2O3-PDA) is proposed as an effective method to passivate electrically active defects in Ge-rich SiGe-on-insulator (SGOI) substrates, which were fabricated using Ge condensation. We found that Al 2O3-PDA could not only suppress the surface reaction during Al-PDA, but could also reduce the defect-induced hole concentration in Ge-rich SGOI, which was in the range of 1016-1018 cm -3 before Al2O3-PDA, by approximately one order of magnitude. Al2O3-PDA greatly improves the electrical characteristics of a back-gate metal-oxide-semiconductor field-effect transistor fabricated on Ge-rich SGOI.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)