Patterning of CVD diamond films by seeding and their field emission properties

Satoshi Katsumata, Yoshimichi Oobuchi, Tanemasa Asano

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Selective seeding for growing diamond on Si substrates was performed by conventional lithography using photoresist mixed with fine diamond particles. The selectivity was improved by filtering the diamond powder-photoresist mixture and carrying out reactive ion etching of patterned substrates. As a result, a selectivity up to 2.0 × 102 or higher was achieved. The resolution was of the order of 1 μm. Field emission from diamonds prepared using this selective growth method was observed without any postgrowth treatment. The measured current vs. voltage plot of a diode showed a rectifying characteristic. Under a forward bias, a current of about 15 μA was obtained at about 570 V, with a turn-on voltage of about 480 V. The emission current was comparable with that which had been observed for Si field emitter tips.

Original languageEnglish
Pages (from-to)1296-1300
Number of pages5
JournalDiamond and Related Materials
Volume3
Issue number11-12
DOIs
Publication statusPublished - Nov 1994

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

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