Perfect conformal deposition of electroless Cu for high aspect ratio through-Si Vias

F. Inoue, Y. Harada, M. Koyanagi, T. Fukushima, K. Yamamoto, S. Tanaka, Z. Wang, S. Shingubara

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Abstract

In three-dimensional integration technology, through-silicon vias (TSVs) with a high aspect ratio in excess of 10 are required, due to a strong demand for a higher packing density. We achieved perfect conformal electroless plating of Cu by the addition of Cl- and bis(3-sulfopropyl) disulfide to a standard plating bath. With this technology, the Cu thickness of the TSV sidewalls remained constant with depth, even for the TSV with an aspect ratio of 20. Perfect conformal plating is a promising technology that could lower the resistance of high aspect ratio TSVs.

Original languageEnglish
Pages (from-to)H381-H384
JournalElectrochemical and Solid-State Letters
Volume12
Issue number10
DOIs
Publication statusPublished - Aug 24 2009
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

Inoue, F., Harada, Y., Koyanagi, M., Fukushima, T., Yamamoto, K., Tanaka, S., ... Shingubara, S. (2009). Perfect conformal deposition of electroless Cu for high aspect ratio through-Si Vias. Electrochemical and Solid-State Letters, 12(10), H381-H384. https://doi.org/10.1149/1.3193535