Performance dependence of Si quantum dot-sensitized solar cells on counter electrode

Hyunwoong Seo, Daiki Ichida, Giichiro Uchida, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Au counter electrode is generally used with polysulfide electrolyte for quantum dot-sensitized solar cells (QDSCs) due to degradation of QD by iodine electrolyte and strong interaction between Pt counter electrode and S 2% ions in polysulfide electrolyte. In this work, the effects of the thickness and morphology of Au counter electrode on the performance of Si QDSC were investigated. Au film thickness was linearly controlled from 5 to 500nm by deposition time. Cyclic voltammetry and impedance analysis clarified the catalytic activity of counter electrode, surface resistance of transparent conductive oxide (TCO), and the charge transportation at the counter electrode. The increase of Au film thickness reduced the surface resistance of TCO with increased conductivity. No significant difference in the redox reaction from electrolyte to Si QDs was observed for Au film thickness from 20 to 500 nm. Catalytic reaction of counter electrode was activated with the increase of Au film thickness up to 200 nm. The impedance of charge transportation at the counter electrode was also decreased with Au deposition. Their surface resistance, catalytic activity and internal resistance were reflected in overall performance. Consequently, Si QDSC with 200-nm-thick Au counter electrode had the best performance.

Original languageEnglish
Article number05FZ01
JournalJapanese Journal of Applied Physics
Volume53
Issue number5 SPEC. ISSUE 1
DOIs
Publication statusPublished - Jan 1 2014

Fingerprint

Semiconductor quantum dots
Solar cells
counters
solar cells
quantum dots
Electrodes
electrodes
Surface resistance
Film thickness
film thickness
Electrolytes
electrolytes
Transportation charges
polysulfides
Polysulfides
catalytic activity
Catalyst activity
impedance
Oxides
oxides

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Performance dependence of Si quantum dot-sensitized solar cells on counter electrode. / Seo, Hyunwoong; Ichida, Daiki; Uchida, Giichiro; Itagaki, Naho; Koga, Kazunori; Shiratani, Masaharu.

In: Japanese Journal of Applied Physics, Vol. 53, No. 5 SPEC. ISSUE 1, 05FZ01, 01.01.2014.

Research output: Contribution to journalArticle

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