TY - GEN
T1 - Performance enhancement of 0.18μm CMOS on chip bandpass filters using H-shaped parasitic element
AU - Mahmoud, Nessim
AU - El-Hameed, Anwer S.Abd
AU - Barakat, Adel
AU - Abdel-Rahman, Adel B.
AU - Allam, Ahmed
AU - Pokharel, Ramesh K.
PY - 2016/3/21
Y1 - 2016/3/21
N2 - A design of an improved open loop resonator on-chip bandpass filter for 60 GHz millimeter-wave applications using 0.18 μm CMOS technology is presented. The proposed on-chip BPF employs H-shaped parasitic structure inserted between two open loop coupled resonator. The adoption of a two open loop coupled resonators BPF and the utilization of two transmissions zero located at 48 and 80 GHz permit a compact size and high selectivity of the BPF. In addition, the parasitic H-shaped structure increases the capacitance between the two resonators, which enables a further reduction of the physical length of the filter and enhances the coupling between the resonators which improve the filter insertion loss. The proposed BPF has a center frequency of 60 GHz, an insertion loss of-2 dB, a 3dB band width of 13 GHz, and a core size 160 × 480 μm2 with total chip size 680 × 280 μm2 (including bonding pads).
AB - A design of an improved open loop resonator on-chip bandpass filter for 60 GHz millimeter-wave applications using 0.18 μm CMOS technology is presented. The proposed on-chip BPF employs H-shaped parasitic structure inserted between two open loop coupled resonator. The adoption of a two open loop coupled resonators BPF and the utilization of two transmissions zero located at 48 and 80 GHz permit a compact size and high selectivity of the BPF. In addition, the parasitic H-shaped structure increases the capacitance between the two resonators, which enables a further reduction of the physical length of the filter and enhances the coupling between the resonators which improve the filter insertion loss. The proposed BPF has a center frequency of 60 GHz, an insertion loss of-2 dB, a 3dB band width of 13 GHz, and a core size 160 × 480 μm2 with total chip size 680 × 280 μm2 (including bonding pads).
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U2 - 10.1109/ICM.2015.7438049
DO - 10.1109/ICM.2015.7438049
M3 - Conference contribution
T3 - Proceedings of the International Conference on Microelectronics, ICM
SP - 303
EP - 306
BT - 2015 27th International Conference on Microelectronics, ICM 2015
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 27th International Conference on Microelectronics, ICM 2015
Y2 - 20 December 2015 through 23 December 2015
ER -