Performance enhancement of 60 GHz CMOS band pass filter employing oxide height virtual increase

Nessim Mahmoud, Adel Barakat, Mohamed E. Nasr, Ramesh Pokharel

Research output: Contribution to journalArticle

Abstract

A high selectivity compact size coupled open-loop resonator (OLR-) band pass filter (BPF) in 0.18 µm TSMC Complementary Metal Oxide Semiconductor (CMOS) with low insertion (IL) is presented in this manuscript. First, shape optimization and folding are used to guarantee compact size. Then, high performance of the proposed BPF is obtained by virtually increasing the height of the oxide between the OLR’s traces and their ground plane. This virtual increase in the oxide height is realized by etching large slot areas below each of the OLRs. Consequently, the traces are characterized by wider width which in return exhibit lower attenuation constant and hence lower IL. The simulated and measured responses have a very good agreement. The fabricated BPF shows an IL of 3.5 dB at 59 GHz with a return loss of 15 dB and a fractional bandwidth of 16.5%. The fabricated chip has an area of 378 × 430 µm 2 including the measurements pads.

Original languageEnglish
Pages (from-to)125-134
Number of pages10
JournalProgress In Electromagnetics Research M
Volume77
DOIs
Publication statusPublished - Jan 1 2019

Fingerprint

Bandpass filters
bandpass filters
Oxides
CMOS
Metals
oxides
augmentation
shape optimization
Shape optimization
slots
folding
insertion
Resonators
Etching
selectivity
attenuation
resonators
chips
etching
bandwidth

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Performance enhancement of 60 GHz CMOS band pass filter employing oxide height virtual increase. / Mahmoud, Nessim; Barakat, Adel; Nasr, Mohamed E.; Pokharel, Ramesh.

In: Progress In Electromagnetics Research M, Vol. 77, 01.01.2019, p. 125-134.

Research output: Contribution to journalArticle

@article{672a745cc5f6440e81772eb1fb8075b8,
title = "Performance enhancement of 60 GHz CMOS band pass filter employing oxide height virtual increase",
abstract = "A high selectivity compact size coupled open-loop resonator (OLR-) band pass filter (BPF) in 0.18 µm TSMC Complementary Metal Oxide Semiconductor (CMOS) with low insertion (IL) is presented in this manuscript. First, shape optimization and folding are used to guarantee compact size. Then, high performance of the proposed BPF is obtained by virtually increasing the height of the oxide between the OLR’s traces and their ground plane. This virtual increase in the oxide height is realized by etching large slot areas below each of the OLRs. Consequently, the traces are characterized by wider width which in return exhibit lower attenuation constant and hence lower IL. The simulated and measured responses have a very good agreement. The fabricated BPF shows an IL of 3.5 dB at 59 GHz with a return loss of 15 dB and a fractional bandwidth of 16.5{\%}. The fabricated chip has an area of 378 × 430 µm 2 including the measurements pads.",
author = "Nessim Mahmoud and Adel Barakat and Nasr, {Mohamed E.} and Ramesh Pokharel",
year = "2019",
month = "1",
day = "1",
doi = "10.2528/pierm18101608",
language = "English",
volume = "77",
pages = "125--134",
journal = "Progress In Electromagnetics Research M",
issn = "1937-8726",
publisher = "EMW Publishing",

}

TY - JOUR

T1 - Performance enhancement of 60 GHz CMOS band pass filter employing oxide height virtual increase

AU - Mahmoud, Nessim

AU - Barakat, Adel

AU - Nasr, Mohamed E.

AU - Pokharel, Ramesh

PY - 2019/1/1

Y1 - 2019/1/1

N2 - A high selectivity compact size coupled open-loop resonator (OLR-) band pass filter (BPF) in 0.18 µm TSMC Complementary Metal Oxide Semiconductor (CMOS) with low insertion (IL) is presented in this manuscript. First, shape optimization and folding are used to guarantee compact size. Then, high performance of the proposed BPF is obtained by virtually increasing the height of the oxide between the OLR’s traces and their ground plane. This virtual increase in the oxide height is realized by etching large slot areas below each of the OLRs. Consequently, the traces are characterized by wider width which in return exhibit lower attenuation constant and hence lower IL. The simulated and measured responses have a very good agreement. The fabricated BPF shows an IL of 3.5 dB at 59 GHz with a return loss of 15 dB and a fractional bandwidth of 16.5%. The fabricated chip has an area of 378 × 430 µm 2 including the measurements pads.

AB - A high selectivity compact size coupled open-loop resonator (OLR-) band pass filter (BPF) in 0.18 µm TSMC Complementary Metal Oxide Semiconductor (CMOS) with low insertion (IL) is presented in this manuscript. First, shape optimization and folding are used to guarantee compact size. Then, high performance of the proposed BPF is obtained by virtually increasing the height of the oxide between the OLR’s traces and their ground plane. This virtual increase in the oxide height is realized by etching large slot areas below each of the OLRs. Consequently, the traces are characterized by wider width which in return exhibit lower attenuation constant and hence lower IL. The simulated and measured responses have a very good agreement. The fabricated BPF shows an IL of 3.5 dB at 59 GHz with a return loss of 15 dB and a fractional bandwidth of 16.5%. The fabricated chip has an area of 378 × 430 µm 2 including the measurements pads.

UR - http://www.scopus.com/inward/record.url?scp=85060133955&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85060133955&partnerID=8YFLogxK

U2 - 10.2528/pierm18101608

DO - 10.2528/pierm18101608

M3 - Article

VL - 77

SP - 125

EP - 134

JO - Progress In Electromagnetics Research M

JF - Progress In Electromagnetics Research M

SN - 1937-8726

ER -