TY - JOUR
T1 - Performance enhancement of 60 GHz CMOS band pass filter employing oxide height virtual increase
AU - Mahmoud, Nessim
AU - Barakat, Adel
AU - Nasr, Mohamed E.
AU - Pokharel, Ramesh K.
N1 - Funding Information:
The authors would like to thank Prof. H. Kanaya of Faculty of Information Science and Electrical Engineering, Kyushu University, Fukuoka, Japan for his remarkable support during the measurements.
Publisher Copyright:
© 2019, Electromagnetics Academy. All rights reserved.
PY - 2019
Y1 - 2019
N2 - A high selectivity compact size coupled open-loop resonator (OLR-) band pass filter (BPF) in 0.18 µm TSMC Complementary Metal Oxide Semiconductor (CMOS) with low insertion (IL) is presented in this manuscript. First, shape optimization and folding are used to guarantee compact size. Then, high performance of the proposed BPF is obtained by virtually increasing the height of the oxide between the OLR’s traces and their ground plane. This virtual increase in the oxide height is realized by etching large slot areas below each of the OLRs. Consequently, the traces are characterized by wider width which in return exhibit lower attenuation constant and hence lower IL. The simulated and measured responses have a very good agreement. The fabricated BPF shows an IL of 3.5 dB at 59 GHz with a return loss of 15 dB and a fractional bandwidth of 16.5%. The fabricated chip has an area of 378 × 430 µm 2 including the measurements pads.
AB - A high selectivity compact size coupled open-loop resonator (OLR-) band pass filter (BPF) in 0.18 µm TSMC Complementary Metal Oxide Semiconductor (CMOS) with low insertion (IL) is presented in this manuscript. First, shape optimization and folding are used to guarantee compact size. Then, high performance of the proposed BPF is obtained by virtually increasing the height of the oxide between the OLR’s traces and their ground plane. This virtual increase in the oxide height is realized by etching large slot areas below each of the OLRs. Consequently, the traces are characterized by wider width which in return exhibit lower attenuation constant and hence lower IL. The simulated and measured responses have a very good agreement. The fabricated BPF shows an IL of 3.5 dB at 59 GHz with a return loss of 15 dB and a fractional bandwidth of 16.5%. The fabricated chip has an area of 378 × 430 µm 2 including the measurements pads.
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U2 - 10.2528/pierm18101608
DO - 10.2528/pierm18101608
M3 - Article
AN - SCOPUS:85060133955
VL - 77
SP - 125
EP - 134
JO - Progress In Electromagnetics Research M
JF - Progress In Electromagnetics Research M
SN - 1937-8726
ER -