We propose a novel chemical-mechanical polishing (CMP) technique for use as the planarization method in the Cu damascene process for the fabrication of next-generation semiconductors. Water-soluble fullerenol, which has attractive features such as a 1-nm grain size, high water dispersibility in a molecular level and metal free, is used in this technique. Chemical process analysis reveals the chemical and mechanical functions of water-soluble fullerenol molecules as abrasive grains. Experimental results show that Cu-surface roughness was improved from 20 to 0.6 nm RMS by using C60(OH)36 fullerenols as functional molecular abrasive grains to achieve better polishing performance than conventional processes.
All Science Journal Classification (ASJC) codes
- Mechanical Engineering
- Industrial and Manufacturing Engineering