Perpendicular spin valve behavior in a micrestructured Co/Cu-Cu oxide/Co trilayer

Kimihide Matsuyama, H. Asada, I. Matsuguma, T. Saeki, K. Taniguchi

Research output: Contribution to journalArticle

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Abstract

In this article we report a perpendicular spin valve behavior in a microstructured noncoupling magnetic trilayer system of Co/Cu-Cu oxide/Co. The Co thin films having markedly different coercivity Hc were prepared with a vacuum evaporation with electron beam (Hc= 20-30 Oe) and rf sputtering (Hc= 90-260 Oe), which enables the selective switching of the magnetization in the base and counter Co layers. The film surface of the Cu was oxidized by the rf sputter etching, which results in the increase of the resistance for the perpendicular current and enables measurements of the perpendicular spin valve behavior at room temperature. The additional spacer layer of sputtered SiO2 with a contact hole of 5 μm diameter was fabricated with photolithographic method between the bottom Co and the intermediate Cu layer, which defined the current path perpendicular to the film plane. The measured magnetoresistance ratio was 0.85% (dR=7.6 mΩ, R=0.89 Ω) at room temperature.

Original languageEnglish
Pages (from-to)5318-5320
Number of pages3
JournalJournal of Applied Physics
Volume79
Issue number8 PART 2A
Publication statusPublished - Apr 15 1996

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oxides
room temperature
spacers
coercivity
electric contacts
counters
sputtering
etching
evaporation
electron beams
magnetization
vacuum
thin films

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Matsuyama, K., Asada, H., Matsuguma, I., Saeki, T., & Taniguchi, K. (1996). Perpendicular spin valve behavior in a micrestructured Co/Cu-Cu oxide/Co trilayer. Journal of Applied Physics, 79(8 PART 2A), 5318-5320.

Perpendicular spin valve behavior in a micrestructured Co/Cu-Cu oxide/Co trilayer. / Matsuyama, Kimihide; Asada, H.; Matsuguma, I.; Saeki, T.; Taniguchi, K.

In: Journal of Applied Physics, Vol. 79, No. 8 PART 2A, 15.04.1996, p. 5318-5320.

Research output: Contribution to journalArticle

Matsuyama, K, Asada, H, Matsuguma, I, Saeki, T & Taniguchi, K 1996, 'Perpendicular spin valve behavior in a micrestructured Co/Cu-Cu oxide/Co trilayer', Journal of Applied Physics, vol. 79, no. 8 PART 2A, pp. 5318-5320.
Matsuyama K, Asada H, Matsuguma I, Saeki T, Taniguchi K. Perpendicular spin valve behavior in a micrestructured Co/Cu-Cu oxide/Co trilayer. Journal of Applied Physics. 1996 Apr 15;79(8 PART 2A):5318-5320.
Matsuyama, Kimihide ; Asada, H. ; Matsuguma, I. ; Saeki, T. ; Taniguchi, K. / Perpendicular spin valve behavior in a micrestructured Co/Cu-Cu oxide/Co trilayer. In: Journal of Applied Physics. 1996 ; Vol. 79, No. 8 PART 2A. pp. 5318-5320.
@article{3fa1379b8e424313bad7d814a3ad8e70,
title = "Perpendicular spin valve behavior in a micrestructured Co/Cu-Cu oxide/Co trilayer",
abstract = "In this article we report a perpendicular spin valve behavior in a microstructured noncoupling magnetic trilayer system of Co/Cu-Cu oxide/Co. The Co thin films having markedly different coercivity Hc were prepared with a vacuum evaporation with electron beam (Hc= 20-30 Oe) and rf sputtering (Hc= 90-260 Oe), which enables the selective switching of the magnetization in the base and counter Co layers. The film surface of the Cu was oxidized by the rf sputter etching, which results in the increase of the resistance for the perpendicular current and enables measurements of the perpendicular spin valve behavior at room temperature. The additional spacer layer of sputtered SiO2 with a contact hole of 5 μm diameter was fabricated with photolithographic method between the bottom Co and the intermediate Cu layer, which defined the current path perpendicular to the film plane. The measured magnetoresistance ratio was 0.85{\%} (dR=7.6 mΩ, R=0.89 Ω) at room temperature.",
author = "Kimihide Matsuyama and H. Asada and I. Matsuguma and T. Saeki and K. Taniguchi",
year = "1996",
month = "4",
day = "15",
language = "English",
volume = "79",
pages = "5318--5320",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "8 PART 2A",

}

TY - JOUR

T1 - Perpendicular spin valve behavior in a micrestructured Co/Cu-Cu oxide/Co trilayer

AU - Matsuyama, Kimihide

AU - Asada, H.

AU - Matsuguma, I.

AU - Saeki, T.

AU - Taniguchi, K.

PY - 1996/4/15

Y1 - 1996/4/15

N2 - In this article we report a perpendicular spin valve behavior in a microstructured noncoupling magnetic trilayer system of Co/Cu-Cu oxide/Co. The Co thin films having markedly different coercivity Hc were prepared with a vacuum evaporation with electron beam (Hc= 20-30 Oe) and rf sputtering (Hc= 90-260 Oe), which enables the selective switching of the magnetization in the base and counter Co layers. The film surface of the Cu was oxidized by the rf sputter etching, which results in the increase of the resistance for the perpendicular current and enables measurements of the perpendicular spin valve behavior at room temperature. The additional spacer layer of sputtered SiO2 with a contact hole of 5 μm diameter was fabricated with photolithographic method between the bottom Co and the intermediate Cu layer, which defined the current path perpendicular to the film plane. The measured magnetoresistance ratio was 0.85% (dR=7.6 mΩ, R=0.89 Ω) at room temperature.

AB - In this article we report a perpendicular spin valve behavior in a microstructured noncoupling magnetic trilayer system of Co/Cu-Cu oxide/Co. The Co thin films having markedly different coercivity Hc were prepared with a vacuum evaporation with electron beam (Hc= 20-30 Oe) and rf sputtering (Hc= 90-260 Oe), which enables the selective switching of the magnetization in the base and counter Co layers. The film surface of the Cu was oxidized by the rf sputter etching, which results in the increase of the resistance for the perpendicular current and enables measurements of the perpendicular spin valve behavior at room temperature. The additional spacer layer of sputtered SiO2 with a contact hole of 5 μm diameter was fabricated with photolithographic method between the bottom Co and the intermediate Cu layer, which defined the current path perpendicular to the film plane. The measured magnetoresistance ratio was 0.85% (dR=7.6 mΩ, R=0.89 Ω) at room temperature.

UR - http://www.scopus.com/inward/record.url?scp=5344242524&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=5344242524&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:5344242524

VL - 79

SP - 5318

EP - 5320

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 8 PART 2A

ER -