Persistent electronic conduction in 12CaO·7Al2O 3 thin films produced by Ar ion implantation

Selective kick-out effect leads to electride thin films

Masashi Miyakawa, Katsuro Hayashi, Yoshitake Toda, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

Research output: Contribution to journalArticle

Abstract

A new method to convert 12CaO·7Al2O3 (C12A7) thin films to electronic conductor by hot Ar+ ion implantation has been developed and its mechanism is discussed. It was found that hot Ar + ion implantation extruded free O2- ions in C12A7 films by kick-out effects at fluences higher than 1×1017 cm -2, which left electrons in the cages embedded in C12A7 crystal and produced high concentration F+-like centers (∼1.4×10 21 cm-3). The resulting films show coloration and persistent electronic conduction with conductivities up to ∼1 Scm -1. On the other hand, fluences less than 1×1017 cm-2 kept the films transparent and insulating.

Original languageEnglish
Pages (from-to)385-389
Number of pages5
JournalUnknown Journal
Volume811
Publication statusPublished - 2004
Externally publishedYes

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Ion implantation
Thin films
ion
Ions
Crystals
conductivity
Electrons
crystal
electron
effect
electronics

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

Persistent electronic conduction in 12CaO·7Al2O 3 thin films produced by Ar ion implantation : Selective kick-out effect leads to electride thin films. / Miyakawa, Masashi; Hayashi, Katsuro; Toda, Yoshitake; Kamiya, Toshio; Hirano, Masahiro; Hosono, Hideo.

In: Unknown Journal, Vol. 811, 2004, p. 385-389.

Research output: Contribution to journalArticle

Miyakawa, Masashi ; Hayashi, Katsuro ; Toda, Yoshitake ; Kamiya, Toshio ; Hirano, Masahiro ; Hosono, Hideo. / Persistent electronic conduction in 12CaO·7Al2O 3 thin films produced by Ar ion implantation : Selective kick-out effect leads to electride thin films. In: Unknown Journal. 2004 ; Vol. 811. pp. 385-389.
@article{0e3dcea8d6b7416da98118396501fd56,
title = "Persistent electronic conduction in 12CaO·7Al2O 3 thin films produced by Ar ion implantation: Selective kick-out effect leads to electride thin films",
abstract = "A new method to convert 12CaO·7Al2O3 (C12A7) thin films to electronic conductor by hot Ar+ ion implantation has been developed and its mechanism is discussed. It was found that hot Ar + ion implantation extruded free O2- ions in C12A7 films by kick-out effects at fluences higher than 1×1017 cm -2, which left electrons in the cages embedded in C12A7 crystal and produced high concentration F+-like centers (∼1.4×10 21 cm-3). The resulting films show coloration and persistent electronic conduction with conductivities up to ∼1 Scm -1. On the other hand, fluences less than 1×1017 cm-2 kept the films transparent and insulating.",
author = "Masashi Miyakawa and Katsuro Hayashi and Yoshitake Toda and Toshio Kamiya and Masahiro Hirano and Hideo Hosono",
year = "2004",
language = "English",
volume = "811",
pages = "385--389",
journal = "Quaternary International",
issn = "1040-6182",
publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Persistent electronic conduction in 12CaO·7Al2O 3 thin films produced by Ar ion implantation

T2 - Selective kick-out effect leads to electride thin films

AU - Miyakawa, Masashi

AU - Hayashi, Katsuro

AU - Toda, Yoshitake

AU - Kamiya, Toshio

AU - Hirano, Masahiro

AU - Hosono, Hideo

PY - 2004

Y1 - 2004

N2 - A new method to convert 12CaO·7Al2O3 (C12A7) thin films to electronic conductor by hot Ar+ ion implantation has been developed and its mechanism is discussed. It was found that hot Ar + ion implantation extruded free O2- ions in C12A7 films by kick-out effects at fluences higher than 1×1017 cm -2, which left electrons in the cages embedded in C12A7 crystal and produced high concentration F+-like centers (∼1.4×10 21 cm-3). The resulting films show coloration and persistent electronic conduction with conductivities up to ∼1 Scm -1. On the other hand, fluences less than 1×1017 cm-2 kept the films transparent and insulating.

AB - A new method to convert 12CaO·7Al2O3 (C12A7) thin films to electronic conductor by hot Ar+ ion implantation has been developed and its mechanism is discussed. It was found that hot Ar + ion implantation extruded free O2- ions in C12A7 films by kick-out effects at fluences higher than 1×1017 cm -2, which left electrons in the cages embedded in C12A7 crystal and produced high concentration F+-like centers (∼1.4×10 21 cm-3). The resulting films show coloration and persistent electronic conduction with conductivities up to ∼1 Scm -1. On the other hand, fluences less than 1×1017 cm-2 kept the films transparent and insulating.

UR - http://www.scopus.com/inward/record.url?scp=12844278932&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=12844278932&partnerID=8YFLogxK

M3 - Article

VL - 811

SP - 385

EP - 389

JO - Quaternary International

JF - Quaternary International

SN - 1040-6182

ER -