Controlling structural distortions that are closely related to functional properties in transition-metal oxides is a key not only to exploring novel phenomena but also to developing novel oxide-based electronic devices. In this review article, we overview investigations revealing that oxygen displacement at the heterointerface is a key parameter characterizing structure-property relationships of heterostructures. We further demonstrate that the interface engineering of the oxygen displacement is useful to control structural and electronic properties of strained oxides.
All Science Journal Classification (ASJC) codes
- Inorganic Chemistry